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PDF SS8550 Data sheet ( Hoja de datos )
| Número de pieza | SS8550 | |
| Descripción | PNP Silicon General Purpose Transistor | |
| Fabricantes | Jin Yu Semiconductor | |
| Logotipo |  |
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SS8 550
TRANSISTOR(PNP)
FEATURES
High Collector Current
Complementary to SS8050
SOT–23
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-40
VCEO Collector-Emitter Voltage
-25
VEBO Emitter-Base Voltage
-5
IC Collector Current
-1.5
PC Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
417
Tj Junction Temperature
Tstg Storage Temperature
150
-55～+150
Unit
V
V
V
A
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100µA, IE=0
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100µA, IC=0
Collector cut-off current
ICBO
VCB=-40V, IE=0
Collector cut-off current
ICEO
VCE=-20V, IB=0
Emitter cut-off current
IEBO
VEB=-5V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
Collector-emitter saturation voltage
VCE(sat) IC=-800mA, IB=-80mA
Base-emitter saturation voltage
VBE(sat) IC=-800mA, IB=-80mA
Base-emitter voltage
VBE VCE=-1V, IC=-10mA
Transition frequency
fT VCE=-10V,IC=-50mA , f=30MHz
Collector output capacitance
Cob VCB=-10V, IE=0, f=1MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
MARKING
L
120–200
H
200–350
Y2
Min Typ Max Unit
-40 V
-25 V
-5 V
-100
nA
-100
nA
-100
nA
120 400
40
-0.5 V
-1.2 V
-1 V
100 MHz
20 pF
J
300–400
JinYu
semiconductor
www.htsemi.com
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SS8550.PDF ] | |
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