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PDF 80NF03L-04 Data sheet ( Hoja de datos )
| Número de pieza | 80NF03L-04 | |
| Descripción | STP80NF03L-04 | |
| Fabricantes | STMicroelectronics | |
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STP80NF03L-04
STB80NF03L-04 STB80NF03L-04-1
N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STB80NF03L-04/-1
STP80NF03L-04
30 V <0.004 Ω
30 V <0.004 Ω
s TYPICAL RDS(on) = 0.0035Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
ID
80 A
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
1
D2PAK
TO-263
123
I2PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB80NF03L-04
STB80NF03L-04T4
STP80NF03L-04
STB80NF03L-04-1
MARKING
80NF03L-04 @
80NF03L-04 @
80NF03L-04 @
80NF03L-04 @
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(**)
Drain Current (continuous) at TC = 25°C
ID(**)
Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
February 2003
.
PACKAGE
D2PAK
D2PAK
TO-220
I2PAK
PACKAGING
TUBE
TAPE & REEL
TUBE
TUBE
Value
30
30
± 20
80
80
320
300
2
2
2.3
-60 to 175
175
(1) ISD ≤80A, di/dt ≤240A/µs, VDD ≤ 24V, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD = 20V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
°C
°C
1/11
1 page  
Normalized Gate Threshold Voltage vs Temperature
STB80NF03L-04/-1/STP80NF03L-04
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
..
5/11
5 Page 
STB80NF03L-04/-1/STP80NF03L-04
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
® 2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
11/11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet 80NF03L-04.PDF ] | |
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