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What is B1238?

This electronic component, produced by the manufacturer "ROHM Semiconductor", performs the same function as "PNP Transistor - 2SB1238".


B1238 Datasheet PDF - ROHM Semiconductor

Part Number B1238
Description PNP Transistor - 2SB1238
Manufacturers ROHM Semiconductor 
Logo ROHM Semiconductor Logo 


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Medium power transistor(80V, 0.7A)
2SB1189 / 2SB1238
Features
1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A.
2) Complements the 2SD1767 / 2SD1859.
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
80
Collector-emitter voltage
VCEO
80
Emitter-base voltage
VEBO
5
Collector current
IC 0.7
Collector power
dissipation
2SB1189
2SB1238
PC
0.5
2
1
Junction temperature
Tj 150
Storage temperature
Tstg 55 to +150
1 When mounted on a 40×40×0.7 mm ceramic board.
2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
Unit
V
V
V
A
W 1
2
°C
°C
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Denotes hFE
2SB1189
MPT3
QR
BD
T100
1000
2SB1238
ATV
QR
TV2
2500
Dimensions (Unit : mm)
2SB1189
4.0
1.0 2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
2SB1238
6.8
(1) Base
(2) Collector
(3) Emitter
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ.
80
80
5
−−
−−
− −0.2
120
100
14
Max.
0.5
0.5
0.4
390
20
Unit
V
V
V
μA
μA
V
MHz
pF
Conditions
IC=−50μA
IC=−2mA
IE=−50μA
VCB=−50V
VEB=−4V
IC/IB=−500mA/50mA
VCE/IC=−3V/0.1A
VCE=−10V, IE=50mA, f=100MHz
VCB=−10V, IE=0A, f=1MHz
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.07 - Rev.B


Part Details

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1. Transistor (-80V, -0.7A) - Rohm

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