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WILLAS
SOT-23 Plastic-Encap sulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M
&115 THRU
FM1200-
Pb Free Prod
Features
• Batch process design, excellent power dissipation offers
TRANSISTO•RLboe(wtNt epPrrNroef)vi leerssuerlfeaackeamgoeucnutrerde natpapnl idc at ht ieornmianlorredsei sr ttaon c e .
FEATURES
•
optimize board space.
Low power loss, high efficiency.
Power d•iHssigihpcautriroennt capability, low forward voltage drop.
Pb-Free pa•cHkiaghgseurigse acavpaaiblialitby.le
RoHS produ•• cUGtlutrfaaordrhriipgnhag-csfopkreionevdgesrcvwooitlcdtaheginegsp.urofftiexct”ioGn.”
Halogen fre•eSpilircoodn uepcitafxoiarl pplaancakrinchgipc, modeteal siulicffoixn j“uHnc”tion.
• Lead-free parts meet environmental standards of
MARKING : HMFIL-STD-19500 /228
• RoHS product for packing code suffix "G"
MAXIMUM RAHTaIlNogGenSfre(Te ap=ro2d5uc℃t four npalecksinsg ocotdheesruwffiixs"eH"noted)
Mechanical data
Symbol • Epoxy : UL94-V0 rated flame retaPradraanmt eter
Package outline
SOT-2SO3D-123H
0.146(3.7)
0.130(3.3)
1. BASE
2. EMITTER
3. COLLECTOR
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Value
Unit 0.040(1.0)
0.024(0.6)
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
• CaseC:oMlloelcdteodr-pBlaasstiec,VSoOltDa-g1e23H
•
TermCinoallesc:tPolra-tEemd ittetermr Vinoaltlsa,gseolderable
per
,
MIL-STD-750
0.031(0.8) Typ.
60
50
V
0.031(0.8) Typ.
V
EmitteMr-BetahsoedV2o0l2ta6ge
• Polarity : Indicated by cathode band
Collector Current -Continuous
• Mounting Position : Any
• WeigChot l:leAcptporroPxiomwaeter dD0is.s0i1p1atgioranm
5V
Dimensions in inches and (millimeters)
150 mA
200 mW
Junction Temperature
150
StMorAagXeIMTeUmMpeRraAtuTrIeNGS AND ELECTRICAL CHARACTERISTICS-55-150
Ratings at 25℃ ambient temperature unless otherwise specified.
℃
℃
ELECTRSICinAgleLpChaHseAhRalAf wCaTveE, R60IHSzT, IreCsSisti(vTeao=f 2in5du℃ctivuenloleads.s otherwise specified)
For capacitive load, derate current by 20%
Parameter RATINGS
Marking Code
CollectMoar-xbimausme RberceuarrkedntoPwenakvRoelvtaergsee Voltage
SymbSoYlMBOL FTMe1s2t0-McHoFnMd1i3t0i-oMnHsFM140-MH FM1M50i-nMH FM160T-MyHpFM180-MMH aFxM1100-MUHnFitM1150-MH FM120
12 13 14 15 16
18 10
115 120
V(BR)CBVORRM IC==1200uA, I3E0 0
40
5060 60
80
100 V 150
200
CollectMoar-xeimmuimttRerMbSrVeoaltkadgeown voltage
Maximum DC Blocking Voltage
V(BR)CEVORMS I=C= 01.41mA, IB210
VDC 20 30
28
40
3550 42
50 60
56
70 V 105
140
80 100 150 200
CollectMoraxcimuut-mofAfvceurargreeFnotrward Rectified Current
ICBO I=O VCB=60V, IE 0
1.0 0.1 uA
CollectPoerakcuFotr-woafrfdcSuurrgreenCturrent 8.3 ms single half sine-wavIeCEO IFS=M VCE=50V, IB 0
superimposed on rated load (JEDEC method)
EmitterTycpuicta-ol TffhecrumrarleRnetsistance (Note 2)
DC curTreypnictagl aJuinnction Capacitance (Note 1)
Operating Temperature Range
IEBO R=ΘJA VEB= 5V, IC 0
hFE
CJ
TJ
VCE= 6V, I-C5=5 t2om+A125
30
40
130
120
0.1 uA
0 .1 uA
4-5050 to +150
CollectSotro-reagmeiTtteemrpsearattuurreatRioanngevoltage
VCE(satT) STG IC=100mA, IB= 10mA
- 65 to +175 0.25
V
Base-emitter saturationCHvAoRltAaCgTeERISTICS
VBE(saSt)YMBOLICF=M112000-MmHAF,MI1B3=0-1M0HmFMA140-MH FM150-MH FM160-MH FM180-MH1FM1100-MH VFM1150-MH FM1200
Maximum Forward Voltage at 1.0A DC
TransitMioanximfruemquAevenrcagye Reverse Current at @T A=25℃ fT
Rated DC Blocking Voltage
@T A=125℃
VF
IR
VCE=10V, IC= 1m0A.5, 0
f=30MHz
0.70
80
0.5
10
0.85
0.9
MHz
0.9
NOTES:
CLAS1S- MIFeIaCsuAreTd aIOt 1NMHOZ aFndhapFpElied reverse voltage of 4.0 VDC.
Rank 2- Thermal Resistance From Junction to Ambient L
Rang e
130-200
H
200-400
2012-06
2012-0
WILLAS ELECTRONIC CO
WILLAS ELECTRONIC CORP.