A1309 Datasheet PDF - FGX
Part Number | A1309 | |
Description | PNP Silicon | |
Manufacturers | FGX | |
Logo | ||
There is a preview and A1309 download ( pdf file ) link at the bottom of this page. Total 1 Pages |
Preview 1 page No Preview Available ! ■■APPLICATION:GENERAL PURPOSE APPLICATION.
■■MAXIMUM RATINGS(Ta=25℃)
PARAMETER
SYMBOL RATING UNIT
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
-30 V
-25 V
-5 V
-100 mA
300 mW
150 ℃
﹣55~150 ℃
A1309
—PNP silicon —
■■ELECTRICAL CHARACTERISTICS(Ta=25℃)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
Common Emitter DC Current Gain hFE
400
VCE= -10V,Ic= -2mA
Collector Cut-off Current
ICBO
-0.1 µA VCB= -30V,IE=0
Emitter Cut-off Current
IEBO
-0.1 µA VEB= -5V,Ic=0
Collector-Base Breakdown Voltage BVCBO -30
V Ic= -0.1mA,IE=0
Collector-Emitter Breakdown Voltage BVCEO -25
V Ic= -1mA,IB=0
Emitter-Base Breakdown Voltage
BVEBO
-5
V IE= -0.1mA,Ic=0
Collector-Emitter Saturation Voltage VCE(sat)
-0.3 V
Ic= -100mA,IB= -10mA
Base-Emitter Saturation Voltage
VBE(sat)
-1.1 V
Ic= -100mA, IB= -10mA
Gain bandwidth product
fT 40
MHz Ic= -1mA,VCE= -10V
Common Base Output Capacitance Cob
4 7 PF VCB= -10V, IE=0, f = 1MHz
Power Gain
GP
1.0 10
dB VCE= -6V,Ic= -0.1mA,f= 1MHz,Rg=10K=
■■hFE Classification
Classification
hFE
O
≥400
Y
|
|
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for A1309 electronic component. |
Information | Total 1 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ A1309.PDF Datasheet ] |
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