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Datasheet K1341 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1K1341N-Channel MOSFET, 2SK1341

2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK
Hitachi Semiconductor
Hitachi Semiconductor
data


K13 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1K13005V Crystal Clock Oscillators

K1300 Series 5V Crystal Clock Oscillators ! ! ! ! ! ! TTL/CMOS Compatible Tri-State Feature for Auto Test Systems Fast Rise and Fall Times 70 to 120 MHz Frequency Range Tight Symmetry (45/55%) Available ±100ppm Stability Standard ±50ppm Stability Available - K1350 ax. mM m 8 2
Champion
Champion
oscillator
2K1300E70silicon bilateral voltage triggered switch

DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac
Teccor
Teccor
data
3K1300Gsilicon bilateral voltage triggered switch

DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac
Teccor
Teccor
data
4K1300Ssilicon bilateral voltage triggered switch

DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diac
Teccor
Teccor
data
5K1304N-Channel MOSFET, 2SK1304

2SK1304 Silicon N Channel MOS FET REJ03G0923-0200 (Previous: ADE-208-1262) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for mo
Renesas Technology
Renesas Technology
data
6K1305Silicon N Channel MOS FET

2SK1305 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline
Renesas
Renesas
mosfet
7K1305N-Channel MOSFET, 2SK1305

2SK1305 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO
Hitachi
Hitachi
data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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