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What is 2N03L05?

This electronic component, produced by the manufacturer "Infineon Technologies", performs the same function as " Power-Transistor".


2N03L05 Datasheet PDF - Infineon Technologies

Part Number 2N03L05
Description Power-Transistor
Manufacturers Infineon Technologies 
Logo Infineon Technologies Logo 


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OptiMOS® Power-Transistor
Feature
N-Channel
Enhancement mode
Logic Level
Excellent Gate Charge x RDS(on)
product (FOM)
Superior thermal resistance
175°C operating temperature
Avalanche rated
dv/dt rated
P- TO262 -3-1
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
Product Summary
VDS
RDS(on)
ID
30 V
5.2 m
80 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP80N03S2L-05
SPB80N03S2L-05
SPI80N03S2L-05
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
Ordering Code
Q67042-S4033
Q67042-S4032
Q67042-S4093
Marking
2N03L05
2N03L05
2N03L05
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current 1)
TC=25°C
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=80 A , VDD=25V, RGS=25
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
80
80
320
325
16
6
±20
167
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-04-24

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2N03L05 equivalent
SPI80N03S2L-05
SPP80N03S2L-05,SPB80N03S2L-05
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPP80N03S2L-05
190 Ptot = 167W
Ai
hgf e
160
140
120
100
80
VGS [V]
a 2.5
b 3.0
c 3.5
d 4.0
d e 4.5
f 5.0
g 5.5
h 6.0
i 10.0
60 c
40
20 b
0
0 0.5
1 1.5
2 2.5
3
a
3.5 4
V
5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS2 x ID x RDS(on)max
parameter: tp = 80 µs
250
A
200
175
150
125
100
75
50
25
0
0
1
2
3
4V
6
VGS
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPP80N03S2L-05
16
mc
d
12
10
8
e
6
f
4
g
i
h
2 VGS [V] =
c d ef
3.5 4.0 4.5 5.0
ghi
5.5 6.0 10.0
0
0 20 40 60 80
100
A 140
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
140
S
100
80
60
40
20
0
0
25 50
75 100 125 150 175 200 A 250
ID
Page 5
2003-04-24


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2N03L05 electronic component.


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2N03L05 Pinout


1. OptiMOS Power Transistor - Infineon

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Featured Datasheets

Part NumberDescriptionMFRS
2N03L05The function is Power-Transistor. Infineon TechnologiesInfineon Technologies

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