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D669A Datasheet PDF - JCST

Part Number D669A
Description NPN Transistor
Manufacturers JCST 
Logo JCST Logo 

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SD669
2SD669A
TRANSISTOR (NPN)
TO-126
FEATURES
Low Frequency Power Amplifier Complementary Pair
with 2SB649/A
1. EMITTER
MAXIMUM RATINGS (Ta=25unless otherwise noted)
2. COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
BDTICTstg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage 2SD669
2SD669A
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
180
120
160
5
1.5
1
150
-55-150
Unit
V
V
V
A
W
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO
V(BR)CEO
IC=1mA, IE=0
IC=10mA, IB=0
2DS669
2SD669A
V(BR)EBO IE=1mA, IC=0
ICBO
VCB=160V, IE=0
IEBO
hFE(1)
VEB=4V, IC=0
VCE=5V, IC=150mA
2SD669
2SD669A
hFE(2) VCE=5V, IC=500mA
VCE(sat) IC=500mA, IB=50mA
VBE VCE=5V, IC=150mA
fT VCE=5V, IC=150mA
Cob VCB=10V, IE=0, f=1MHz
Min
180
120
160
5
60
60
30
Typ
140
14
Max Unit
V
V
V
10 µA
10 µA
320
200
1V
1.5 V
MHz
pF
CLASSIFICATION OF hFE(1)
Rank
B
C
Range 2SD669
60-120
100-200
2SD669A
60-120
100-200
www.BDTIC.com/jcst
D
160-320



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