K2835 Datasheet PDF - Toshiba Semiconductor
Part Number | K2835 | |
Description | MOSFET ( Transistor ) - 2SK2835 | |
Manufacturers | Toshiba Semiconductor | |
Logo | ||
There is a preview and K2835 download ( pdf file ) link at the bottom of this page. Total 6 Pages |
Preview 1 page No Preview Available ! 2SK2835
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2835
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.)
l High forward transfer admittance : |Yfs| = 4.5 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 200 V)
l Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
200
200
±20
5
20
1.3
65
5
0.13
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
—
JEITA
—
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to
ambient
Rth (ch−a)
96.1 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.2 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-08-09
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2SK2835
RG = 25 Ω
VDD = 25 V, L = 4.2 mH
EAS
=
1
2
× L × I2
× çæ
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BVDSS
BVDSS - VDD
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5 2002-08-09
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K2835 electronic component. |
Information | Total 6 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ K2835.PDF Datasheet ] |
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