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What is SST11CP15E?

This electronic component, produced by the manufacturer "Microchip", performs the same function as "4.9-5.9 GHz High-Linearity Power Amplifier".


SST11CP15E Datasheet PDF - Microchip

Part Number SST11CP15E
Description 4.9-5.9 GHz High-Linearity Power Amplifier
Manufacturers Microchip 
Logo Microchip Logo 


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4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Data Sheet
The SST11CP15E is a versatile power amplifier designed for 802.11a/n/ac
embedded applications and is based on the highly-reliable InGaP/GaAs HBT
technology. It is easily configured for high-linearity, high-efficiency applications
over a wide temperature range while operating over the 4.9-5.9 GHz frequency
band. The SST11CP15E has excellent linearity while meeting 802.11a spectrum
mask at 23 dBm with a 3.3V power supply, and at 24.5 dBm with a 5.0V supply.
It provides up to 18 dm, at 3% EVM with 802.11a 54 Mbps, and up to 16 dBm, at
1.8% EVM with 802.11ac 351 Mbps Modulation and 3.3V bias. The power ampli-
fier requires only a 4mA reference current for on/off control. It includes a VSWR/
temperature insensitive, linear power detector. The SST11CP15E is offered in a
12-contact UQFN package.
Features
• Small package size
– 12-contact UQFN (2mm x 2mm x 0.6mm max thick-
ness)
• Wide operating voltage range
– VCC = 3.0–5.0V
• High linear output power, 802.11a/n/ac:
– Spectrum mask compliant using 802.11a OFDM
- Up to 24 dBm at 5.0V
- Up to 22 dBm at 3.3V
– Spectrum mask compliant using 802.11n MCS7, 40 MHz
- Up to 22 dBm at 5.0V
- Up to 19 dBm at 3.3V
– ~3% EVM across 5.1-5.9 GHz for 54 Mbps 802.11a
- Up to 20 dBm at 5.0V VCC
- Up to 18 dBm at 3.3V VCC
– 1.8% EVM across 5.1-5.9 GHz for 351 Mbps 802.11ac
- Up to 16 dBm at 3.3V VCC
• High power-added efficiency/low operating current
for 54 Mbps 802.11a applications
– ~10% @ POUT = 19 dBm for 54 Mbps, 3.3V VCC
• Gain:
– Typically >26 dB gain across broadband
4.9-5.9 GHz, 3.3V VCC
• Low idle current
– ~140 mA ICQ, 3.3 V VCC
• High speed power-up/-down
– Turn on/off time (10%~90%) <100 ns
• Low shut-down current (<1 µA)
• On-chip power detector with -20 dB linear dynamic
range
– Temperature Stable
– VSWR insensitive
• 50Ω on-chip input match and simple output match
• Packages available
– 12-pin QFN 2mm x 2mm x 0.55mm
• All lead-free devices are RoHS compliant
Applications
• WLAN (IEEE 802.11a/n/ac)
• Japan WLAN
• HyperLAN2
• Multimedia
• WiMax
©2013 Silicon Storage Technology, Inc.
www.microchip.com
DS70005025C
05/13

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SST11CP15E equivalent
4.9-5.9 GHz High-Linearity Power Amplifier
SST11CP15E
Pin Descriptions
Data Sheet
Table 1: Pin Description
Symbol Pin No. Pin Name Type1 Function
GND
RFIN
0 Ground
1
The center pad should be connected to RF ground with several
low inductance, low resistance vias.
I RF input, DC decoupled
VCCb
2 Power Supply PWR Supply voltage for bias circuit
VREF1
VREF2
3
4
PWR Current Control
PWR Current Control
VREF3
5
PWR Current Control
DET
NC
6 O On-chip power detector
7 No Connection
Unconnected pin
RFOUT
8
O RF Output
GND
VCC3
VCC2
VCC1
9 Ground
Ground (NC is acceptable)
10 Power Supply PWR Power supply, 3rd stage
11 Power Supply PWR Power supply, 2nd stage
12 Power Supply PWR Power supply, 1st stage
1. I=Input, O=Output
T1.1 75025
©2013 Silicon Storage Technology, Inc.
5
DS70005025C
05/13


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for SST11CP15E electronic component.


Information Total 17 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
SST11CP15The function is 4.9-5.8 GHz High-Linearity Power Amplifier. Silicon Storage TechnologySilicon Storage Technology
SST11CP15EThe function is 4.9-5.9 GHz High-Linearity Power Amplifier. MicrochipMicrochip

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