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PDF HX5N90 Data sheet ( Hoja de datos )

Número de pieza HX5N90
Descripción N-Channel MOSFET
Fabricantes TIANJIN HUANXIN TECHNOLOGY 
Logotipo TIANJIN HUANXIN TECHNOLOGY Logotipo



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No Preview Available ! HX5N90 Hoja de datos, Descripción, Manual

HX5N90
5.4 Amps900Volts
N-Channel MOSFET
Description
The HX5N90 N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
Features
z RDS(ON) = 2.3@VGS = 10 V
z Low gate charge ( typical 31nC)
z High ruggedness
z Fast switching capability
z Avalanche energy specified
z Improved dv/dt capability
Symbol
Power MOSFET
Ordering Information
Order Number
Normal
Lead Free Plating
HX5N90-TA3-T
HX5N90L-TA3-T
HX5N90-TF3-T
HX5N90L-TF3-T
Note:Pin Assignment: G:Gate D:Drain S:Source
Package
TO-220
TO-220F
Pin Assignment
123
GDS
GDS
HX5N90L-TA3-T
(1)T:Tube,R:Tape Reel
1Packing Type
2Package Type
3Lead Plating
(2)TA3:TO-220,TF3:TO-220F
(3)L:Lead Free Plating BlankPb/Sn
Absolute Maximum Ratings(Tc=25,unless otherwise specified)
Parameter
Symbol
Ratings
TO-220 TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Currenet Continuous
Drain Current Pulsed
Tc=25
Tc=100
(Note 1)
VDSS
VGSS
ID
IDP
900
±30
5.4 3.0
3.42 1.9
21.6
12.0
Avalanche Energy
Peak Diode Recovery dv/dt
Repetitive
(Note 1)
Single Pulse (Note 2)
(Note 3)
EAR
EAS
dv/dt
15.8
660
4.0
5.1
Total Power Dissipation
Tc=25
Derate above 25
PD
158 51
1.27 0.41
Junction Temperature
TJ +150
Storage Temperature
Drain current limited by maximum junction temperature.
TSTG
-55~+150
Packing
Tube
Tube
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/
天津环鑫科技发展有限公司
TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT CO., LTD
1

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HX5N90 pdf
HX5N90
Typical Characteristics (Continued)
Power MOSFET
Figure 11-1. Transient Thermal Response Curve for TO220
Figure 11-2. Transient Thermal Response Curve for TO220F
天津环鑫科技发展有限公司
TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT CO., LTD
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