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PDF 2N3958 Data sheet ( Hoja de datos )
| Número de pieza | 2N3958 | |
| Descripción | Monolithic N-Channel JFET Dual | |
| Fabricantes | Vishay | |
| Logotipo |  |
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2N3958
Vishay Siliconix
Monolithic N-Channel JFET Dual
PRODUCT SUMMARY
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS)
–1.0 to –4.5
–50
1
IG Max (pA)
–50
jVGS1 – VGS2j Max (mV)
25
FEATURES
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 5 pA
D Low Noise: 9 nV⁄√Hz
D High CMRR: 100 dB
BENEFITS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
APPLICATIONS
D Wideband Differential Amps
D High-Speed,
Temp-Compensated,
Single-Ended Input Amps
D High Speed Comparators
D Impedance Converters
DESCRIPTION
The low cost 2N3958 JFET dual is designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with IG guaranteed at VDG = 20 V.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see 2N5196/5197/5198/5199, the
low-noise U/SST401 series, the high-gain 2N5911/5912, and
the low-leakage U421/423 data sheets.
TO-71
S1
1
D1 2
G2
6
5 D2
3
G1
4
Top View
S2
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70256
S-04031—Rev. B, 04-Jun-01
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2 mW/_C above 85_C
b. Derate 4 mW/_C above 85_C
www.vishay.com
8-1
1 page  
2N3958
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
f = 1 MHz
f = 1 MHz
84
6
VDS = 0 V
4 5V
15 V
2
20 V
0
0 –4 –8 –12 –16 –20
VGS – Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
20
VDS = 20 V
16
ID @ 200 mA
12
3 VDS = 0 V
5V
2
15 V
1
20 V
0
0 –4 –8 –12 –16 –20
VGS – Gate-Source Voltage (V)
Output Conductance vs. Drain Current
2.5
VGS(off) = –2 V
VDS = 20 V
f = 1 kHz
2.0
TA = –55_C
1.5
8 VGS = 0 V
4
0
10
100 1 k 10 k
f – Frequency (Hz)
100 k
Common-Source Forward Transconductance
vs. Drain Current
2.5
VGS(off) = –2 V
2.0
VDS = 20 V
f = 1 kHz
TA = –55_C
1.5
25_C
1.0
0.5
0
0.01
125_C
0.1
ID – Drain Current (mA)
Document Number: 70256
S-04031—Rev. B, 04-Jun-01
1
1.0 25_C
0.5
125_C
0
0.01
0.1
1
ID – Drain Current (mA)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
1 k 10
800 gos 8
600 6
400 4
rDS
200
0
0
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS = 20 V, VGS = 0 V, f = 1 kHz
–1 –2 –3 –4
VGS(off) – Gate-Source Cutoff Voltage (V)
2
0
–5
www.vishay.com
8-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2N3958.PDF ] | |
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