PHPT60606NY Datasheet PDF - NXP Semiconductors
Part Number | PHPT60606NY | |
Description | NPN high power bipolar transistor | |
Manufacturers | NXP Semiconductors | |
Logo | ||
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60 V, 6 A NPN high power bipolar transistor
8 December 2014
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
PNP complement: PHPT60606PY
2. Features and benefits
• High thermal power dissipation capability
• High temperature applications up to 175 °C
• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
• High energy efficiency due to less heat generation
• AEC-Q101 qualified.
3. Applications
• Power management
• Load switch
• Linear mode voltage regulator
• Backlighting applications
• Relay replacement
• Motor drive
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; tp ≤ 1 ms
collector-emitter
saturation resistance
IC = 6 A; IB = 600 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
Min Typ Max Unit
- - 60 V
- - 6A
- - 14 A
- 34 45 mΩ
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NXP Semiconductors
PHPT60606NY
60 V, 6 A NPN high power bipolar transistor
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.33
0.5
0.2
0.1
0.05
0.02
1
0
0.01
aaa-014786
10-1
10-5
10-4
10-3
FR4 PCB, standard footprint
10-2
10-1
1
10 102 103
tp (s)
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102 aaa-014787
Zth(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
1
0.01
0.02
0
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for collector 6 cm2
10-1
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PHPT60606NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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Information | Total 16 Pages | |
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