DataSheet39.com

What is IRF1018ESPbF?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Power MOSFET ( Transistor )".


IRF1018ESPbF Datasheet PDF - International Rectifier

Part Number IRF1018ESPbF
Description Power MOSFET ( Transistor )
Manufacturers International Rectifier 
Logo International Rectifier Logo 


There is a preview and IRF1018ESPbF download ( pdf file ) link at the bottom of this page.





Total 11 Pages



Preview 1 page

No Preview Available ! IRF1018ESPbF datasheet, circuit

Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
PD - 97125
IRF1018EPbF
IRF1018ESPbF
IRF1018ESLPbF
HEXFET® Power MOSFET
D VDSS
60V
RDS(on) typ.
7.1m:
G max. 8.4m:
S ID
79A
D
DS
G
TO-220AB
IRF1018EPbF
G
Gate
D
D
DS
G
D2Pak
IRF1018ESPbF
DS
G
TO-262
IRF1018ESLPbF
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current c
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Peak Diode Recovery e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw k
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy d
Avalanche Current c
Repetitive Avalanche Energy f
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
RθJA
www.irf.com
Junction-to-Case j
Case-to-Sink, Flat Greased Surface , TO-220
Junction-to-Ambient, TO-220 j
Junction-to-Ambient (PCB Mount) , D2Pak ij
Max.
79
56
315
110
0.76
± 20
21
-55 to + 175
300
10lbxin (1.1Nxm)
88
47
11
Typ.
–––
0.50
–––
–––
Max.
1.32
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
2/28/08

line_dark_gray
IRF1018ESPbF equivalent
IRF1018E/S/SLPbF
10
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
τJ
τJ
τ1
τ1
R1R1
CiC=iτi/Ri/iRi
R2R2
τ2
τ2
R3R3
R4R4
τC
Ri (°C/W)
0.026741
τι (sec)
0.000007
τ3 τ4 τ 0.28078 0.000091
τ3 τ4 0.606685 0.000843
0.406128 0.005884
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
0.01
10 0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
1 Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
100
TOP
Single Pulse
BOTTOM 10% Duty Cycle
80 ID = 47A
60
40
20
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
www.irf.com
5


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRF1018ESPbF electronic component.


Information Total 11 Pages
Link URL [ Copy URL to Clipboard ]
Download [ IRF1018ESPbF.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
IRF1018ESPbFThe function is Power MOSFET ( Transistor ). International RectifierInternational Rectifier

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

IRF1     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search