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What is H4N60P?

This electronic component, produced by the manufacturer "HAOHAI", performs the same function as "N-Channel MOSFET".


H4N60P Datasheet PDF - HAOHAI

Part Number H4N60P
Description N-Channel MOSFET
Manufacturers HAOHAI 
Logo HAOHAI Logo 


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No Preview Available ! H4N60P datasheet, circuit

4A, 600V, N沟道 场效应晶体管 产品参数规格书
工业型号
FQP4N60C
FQPF4N60C
公司型号
H4N60P
H4N60F
通俗命名
4N60
H
HAOHAI
封装标识
P: TO-220AB
F: TO-220FP
包装方式
条管装
盒装箱装
每管数量
50Pcs
4N60 Series
N-Channel MOSFET
每盒数量
每箱数量
1000Pcs
5000Pcs
Features
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge: 15nC(Typ.)
 Extended Safe Operating Area
 Lower RDS(ON): 2.0(Typ.) @ VGS=10V
 100% Avalanche Tested
 Package: TO-220AB & TO-220F
ID=4A
BVDSS=600V
RDS(on)=2.0
■特点
 导通电阻低、开关速度快、驱动简单、可并联使用、输入阻抗高、符合RoHS规范
■应用范围
 开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源、
 各种充电器、电子整流器、电子变压器、逆变器、控制器、转换器、
 风扇控制板、以及电源适配器、汽车稳压器等线性放大和功率开关电路
■封装形式
 TO-220P TO-220AB(半塑封)
 TO-220F TO-220FP(全塑封)
4N60 Series Pin Assignment
3-Lead Plastic TO-220AB
Package Code: P
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
2D
Series Symbol:
1G
3S
Absolute Maximum RatingsTC=25unless otherwise specified
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
IAR
EAR
Drain-Source Voltage
Drain CurrentContinuous (TC=25)
Drain CurrenContinuous (TC=100)
Drain Current – Pulsed (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt
Peak Diode Recovery dv/dt (Note 3)
PD
Power Dissipation (TC=25)
Power Dissipation - Derate above 25
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
  * Drain current limited by maximum junction temperature TO-220F
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
TO-220AB
Typ.
Max.
-- 1.25
0.5 --
-- 62.5
Value
TO-220AB TO-220F
600 600
4.0 4.0*
2.5 2.5*
16 16*
±30 ±30
240 240
4.0 4.0
10 10
5.5 5.5
100 33
0.8 0.26
-50 ~ +150
300
TO-220F
Typ. Max.
-- 3.79
-- --
-- 62.5
Units
V
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
1页 共7
致力於中國功率器件優秀供應商
H4N60C_PF_BUB

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H4N60P equivalent
4A, 600V, N沟道 场效应晶体管 产品参数规格书
Fig-12. Gate Charge Test Circuit & Waveform
4N60 Series
N-Channel MOSFET
Fig-13. Resistive Switching Test Circuit & Waveforms
Fig-14. Unclamped Inductive Switching Test Circuit & Waveforms
Fig-15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
5页 共7
致力於中國功率器件優秀供應商
H4N60C_PF_BUB


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H4N60P electronic component.


Information Total 7 Pages
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