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PDF FZT593 Data sheet ( Hoja de datos )
| Número de pieza | FZT593 | |
| Descripción | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FZT593 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
7
COMPLEMENTARY TO FZT493
PARTMARKING DETAIL - FZT593
FZT593
C
E
ABSOLUTE MAXIMUM RATINGS.
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
-120
-100
-5
-2
-1
-200
2
-55 to +150
V
V
V
A
A
mA
W
°C
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Saturation Voltages
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Turn-on Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
fT
-120
-100
-5
100
100
100
50
50
-100
-100
-100
-0.2
-0.3
-1.1
-1.0
300
V
V
V
nA
nA
nA
V
V
V
V
MHz
IC=-100µA
IC=-10mA*
IE=-100µA
VCB=-100V
VEB=-4V
VCES=-100V
IC=-250mA,IB=-25mA*
IC=-500mA IB=-50mA*
IC=-500mA,IB=-50mA*
IC=-1mA, VCE=-5V*
IC=-1mA, VCE=-5V
IC=-250mA,VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
5 pF
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT593 datasheet
VCB=-10V, f=1MHz
3 - 196
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet FZT593.PDF ] | |
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