Datasheet FZT1051A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	FZT1051A	NPN MEDIUM POWER HIGH GAIN TRANSISTOR A Product Line of Diodes Incorporated Green FZT1051A 40V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features  BVCEO > 40V  IC = 5A High Continuous Collector Current  ICM = 20A Peak Pulse Current  Low Saturation Voltage VCE(sat) < 120mV @ 1A  RSAT = 50mΩ @ 5A for a Low Equivalen	Diodes	transistor
2	FZT1051A	NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 4 - FEBRUARY 1998 FEATURES * * * * * * VCEO = 40V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A FZT1051A C E C B ABSOLUTE MAXIMUM RATI	Zetex Semiconductors	transistor

FZT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	FZT1047A	NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - AUGUST 1997 FEATURES * * * * * * VCEO = 10V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 44mΩ at 5A FZT1047A C E C B SOT223 ABSOLUTE MAXIMUM	Zetex Semiconductors	transistor
2	FZT1048A	NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1- FEBRUARY 1997 FEATURES * * * * * * VCEO = 17.5V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A FZT1048A C E C B SOT223 ABSOLUTE MAXIMUM RAT	Zetex Semiconductors	transistor
3	FZT1049A	NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR SOT 223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - APRIL 1997 FZT1049A C FEATURES * * * * * * VCEO = 30V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A E C B ABSOLUTE MAXIMUM RATIN	Zetex Semiconductors	transistor
4	FZT1051A	NPN MEDIUM POWER HIGH GAIN TRANSISTOR A Product Line of Diodes Incorporated Green FZT1051A 40V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features  BVCEO > 40V  IC = 5A High Continuous Collector Current  ICM = 20A Peak Pulse Current  Low Saturation Voltage VCE(sat) < 120mV @ 1A  RSAT = 50mΩ @ 5A for a Low Equivalen	Diodes	transistor
5	FZT1051A	NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 4 - FEBRUARY 1998 FEATURES * * * * * * VCEO = 40V 5 Amp Continuous Current 20 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 50mΩ at 5A FZT1051A C E C B ABSOLUTE MAXIMUM RATI	Zetex Semiconductors	transistor
6	FZT1053	NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - MARCH 2001 FEATURES * * * * * * VCEO = 75V 4.5 Amp Continuous Current 10 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 78mΩ at 4.5A FZT1053A C E C B SOT223 ABSOLUTE MAXI	Zetex Semiconductors	transistor
7	FZT1053A	NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - MARCH 2001 FEATURES * * * * * * VCEO = 75V 4.5 Amp Continuous Current 10 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE(sat) = 78mΩ at 4.5A FZT1053A C E C B SOT223 ABSOLUTE MAXI	Zetex Semiconductors	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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