DataSheet39.com

What is FZ800R33KF2C?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "IGBT-Module".


FZ800R33KF2C Datasheet PDF - Infineon

Part Number FZ800R33KF2C
Description IGBT-Module
Manufacturers Infineon 
Logo Infineon Logo 


There is a preview and FZ800R33KF2C download ( pdf file ) link at the bottom of this page.





Total 8 Pages



Preview 1 page

No Preview Available ! FZ800R33KF2C datasheet, circuit

TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FZ800R33KF2C
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
Tvj = 25°C
Tvj = -25°C
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
tP = 1 ms
Gesamt-Verlustleistung
Totalpowerdissipation
TC = 25°C, Tvj max = 150°C
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage

VorläufigeDaten
PreliminaryData
VCES 
IC nom
IC

ICRM 
Ptot 
VGES 
3300
3300
800
1300
1600
9,60
+/-20
V

A
A
A
 kW
V
CharakteristischeWerte/CharacteristicValues
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
IC = 800 A, VGE = 15 V
IC = 800 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
IC = 80,0 mA, VCE = VGE, Tvj = 25°C
Gateladung
Gatecharge
VGE = -15 V ... +15 V, VCE = 1800V
InternerGatewiderstand
Internalgateresistor
Tvj = 25°C
Eingangskapazität
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
VCE = 3300 V, VGE = 0 V, Tvj = 25°C
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
IC = 800 A, VCE = 1800 V
VGE = ±15 V
RGon = 1,4 , CGE = 150 nF
Tvj = 25°C
Tvj = 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
IC = 800 A, VCE = 1800 V
VGE = ±15 V
RGon = 1,4 , CGE = 150 nF
Tvj = 25°C
Tvj = 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
IC = 800 A, VCE = 1800 V
VGE = ±15 V
RGoff = 1,8 , CGE = 150 nF
Tvj = 25°C
Tvj = 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
IC = 800 A, VCE = 1800 V
VGE = ±15 V
RGoff = 1,8 , CGE = 150 nF
Tvj = 25°C
Tvj = 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
IC = 800 A, VCE = 1800 V, LS = 40 nH
VGE = ±15 V
RGon = 1,4 , CGE = 150 nF
Tvj = 25°C
Tvj = 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
IC = 800 A, VCE = 1800 V, LS = 40 nH
VGE = ±15 V
RGoff = 1,8 , CGE = 150 nF
Tvj = 25°C
Tvj = 125°C
Kurzschlußverhalten
SCdata
VGE 15 V, VCC = 2500 V
VCEmax = VCES -LsCE ·di/dt
tP 10 µs, Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT
Wärmewiderstand,GehäusebisKühlkörper proIGBT/perIGBT
Thermalresistance,casetoheatsink
λPaste=1W/(m·K)/λgrease=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

VCE sat
VGEth
QG
RGint
Cies
Cres
ICES
IGES
td on
tr
td off
tf
Eon
Eoff
ISC
RthJC
RthCH
Tvj op
min. typ. max.
3,40 4,25
4,30 5,00
V
V
4,2 5,1 6,0 V
 15,0  µC
 0,63 
 100  nF
 5,40  nF
  5,0 mA
  400 nA
0,28
 0,28 
µs
µs
0,18
 0,20 
µs
µs
1,55
 1,70 
µs
µs
0,20
 0,20 
µs
µs
930
 1450 
mJ
mJ
870
 1000 
mJ
mJ
 4000 
A
  13,0 K/kW
 9,00
K/kW
-40  125 °C
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.1
1

line_dark_gray
FZ800R33KF2C equivalent
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
FZ800R33KF2C
SchaltverlusteIGBT,Wechselrichter(typisch)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=800A,VCE=1800V,CGE=150nF
8000
7000
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
VorläufigeDaten
PreliminaryData
TransienterWärmewiderstandIGBT,Wechselrichter
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
100
ZthJC : IGBT
6000
5000
10
4000
3000
2000
1
1000
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
RG []
0,1
0,001
0,01
i: 1 2 3 4
ri[K/kW]: 5,85 3,25 0,78 3,12
τi[s]: 0,03 0,1 0,3 1
0,1 1
t [s]
10
SichererRückwärts-ArbeitsbereichIGBT,Wechselrichter
(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=1.8,Tvj=125°C,CGE=150nF
1800
1600
IC, Modul
IC, Chip
1400
1200
1000
800
600
400
200
DurchlasskennliniederDiode,Wechselrichter(typisch)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
1600
1400
Tvj = 25°C
Tvj = 125°C
1200
1000
800
600
400
200
0
0 500 1000 1500 2000 2500 3000 3500
VCE [V]
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
VF [V]
preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:2.1
5


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FZ800R33KF2C electronic component.


Information Total 8 Pages
Link URL [ Copy URL to Clipboard ]
Download [ FZ800R33KF2C.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
FZ800R33KF2CThe function is IGBT-Module. InfineonInfineon

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

FZ80     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search