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Datasheet C5568 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | C5568 | NPN Transistor, 2SC5568 Ordering number:ENN6308
PNP/NPN Epitaxial Planar Silicon Transistors
2SA2015/2SC5568
DC/DC Converter Applications
Applications
Package Dimensions
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emit | Sanyo Semicon Device | data |
C55 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | C5502 | NPN Transistor, 2SC5502 Ordering number:ENN6279
NPN Epitaxial Planar Silicon Transistor
2SC5502
High-Frequency Low-Noise Amplifier Applications
Features
· Low noise : NF=1.1dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ.
Package Dimensions
unit:mm 2161
[2SC5502]
0 Sanyo data | | |
2 | C5505 | NPN Transistor, 2SC5505 Power Transistors
2SC5505
Silicon NPN epitaxial planar type
For power amplification
■ Features • High-speed switching • TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitte Panasonic data | | |
3 | C5508 | NPN Transistor, 2SC5508 PRELIMINARY DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5508
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
FEATURES
• Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA � NEC data | | |
4 | C5511 | NPN Transistor, 2SC5511 2SC5511
Transistors
www.datasheet4u.com
For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A)
2SC5511
zExternal dimensions (Unit : mm)
TO-220FN
10.0
zStructure NPN Silicon Epitaxial Planar Transistor
4.5
φ3.2
2.8
zFeatures 1) Electrical characteristics of DC current gain hFE is fla ROHM Semiconductor data | | |
5 | C5516 | NPN Transistor, 2SC5516 Power Transistors
2SC5516
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC Panasonic data | | |
6 | C551E | C-551E
C/A-551X, C/A-561X SINGLE DIGIT DISPLAY
Shape Part No. Common Common Cathode Anode Chip Raw Material Emitted Color Wave Electro-Optical Characteristics Length Vf(V)20mA Iv(ucd)10mA Fig.No. ɡp(nm) Typ. Max. Typ.
C-551H C-551E C-551G C-551Y C-551SR C-561H C-561E C-561G C-561Y C- Para Light Electronics data | | |
7 | C5521 | NPN Transistor, 2SC5521 New
Horizontal Deflection Transistor Series for TV
s Overview
Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safeoper Panasonic data | |
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Número de pieza | Descripción | Fabricantes | |
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