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PDF HF05D060ACE Data sheet ( Hoja de datos )
| Número de pieza | HF05D060ACE | |
| Descripción | Hexfred Die | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 94412A
HF05D060ACE
Features
GEN3 Hexfred Technology
Low VF
Low IRR
Low tRR
Soft Reverse Recovery
Benefits
Benchmark Efficiency for Motor Control Applications
Rugged Transient Performance
Low EMI
Excellent Current Sharing in Parallel Operation
Qualified for Industrial Market
Hexfred Die in Wafer Form
600V
IF(nom)=5A
VF(typ)= 1.15V @ IF(nom) @ 25°C
Motor Control Antiparallel Diode
150mm Wafer
Reference Standard IR Package Part: IRGS10B60KD
Parameter
Electrical Characteristics (Wafer Form)
Description
Guaranteed (min, max)
Test Conditions
VF Forward Voltage Drop
BVR Reverse Breakdown Voltage
IRM Reverse Leakage Current
0.8V min, 1.05V max
600V min
10µA max
IC = 1A, TJ = 25°C
TJ = 25°C, IR = 1mA
TJ = 25°C, VR = 600V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Cr (0.1µm)- NiV (0.2µm) - Ag (0.25µm)
Nominal Front Metal Composition, (Thickness)
99% Al/1% Si, (3µm)
Dimensions
0.075'' x 0.076"
Wafer Diameter
150mm, with std. < 100 > flat
Wafer Thickness, Tolerance
376µm, +/-15µm
Relevant Die Mechanical Dwg. Number
01-5507
Minimum Street Width
125µm
Reject Ink Dot Size
0.25mm diameter minimum
Ink Dot Location
Consistent throughout same wafer lot
Recommended Storage Environment
Store in original container, in dessicated
nitrogen, with no contamination
Recommended Die Attach Conditions
For optimum electrical results, die attach
temperature should not exceed 300°C
Die Outline
www.irf.com
1
07/01/04
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet HF05D060ACE.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HF05D060ACE | Hexfred Die | International Rectifier |
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