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PDF A1150 Data sheet ( Hoja de datos )
| Número de pieza | A1150 | |
| Descripción | PNP Transistor - 2SA1150 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de A1150 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1150
2SA1150
Low Frequency Amplifier Applications
Unit: mm
• High hFE: hFE = 100~320
• Complementary to 2SC2710.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −35 V
Collector-emitter voltage
VCEO −30 V
Emitter-base voltage
VEBO −5 V
Collector current
IC
−800
mA
Base current
IB
−160
mA
Collector power dissipation
PC 300 mW
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
JEITA
―
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-4E1A
operating temperature/current/voltage, etc.) are within the
Weight: 0.13 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = −30 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CEO IC = −10 mA, IB = 0
hFE (1)
(Note)
VCE = −1 V, IC = −100 mA
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = −1 V, IC = −700 mA
IC = −500 mA, IB = −20 mA
VCE = −1 V, IC = −10 mA
VCE = −5 V, IC = −10 mA
VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 100~200, Y: 160~320
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
−30 ⎯
⎯
V
100 ⎯ 320
35 ⎯ ⎯
⎯ ⎯ −0.7 V
−0.5 ⎯ −0.8 V
⎯ 120 ⎯ MHz
⎯ 19 ⎯ pF
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet A1150.PDF ] | |
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