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Número de pieza | TTK2837 | |
Descripción | Silicon N Channel Field Effect Transistor | |
Fabricantes | Toshiba | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TTK2837 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TTK2837
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
TTK2837
Switching Regulator Applications
• Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.)
• High forward transfer admittance: |Yfs| = 8.5 S (typ.)
• Low leakage current: IDSS = 10 µA (VDS = 500 V)
• Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
15.9 MAX.
3.2 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
±30
20
80
280
470
20
28
150
−55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
2.0 ± 0.3
1.0
0.3
0.25
5.45 ± 0.2
5.45 ± 0.2
123
1. Gate
2. Drain(heat sink)
3. Source
JEDEC
⎯
JEITA
SC-65
TOSHIBA
2-16C1B
Weight : 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth(ch-c)
Rth(ch-a)
0.466
50
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.0 mH, RG = 25 Ω, IAR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1
1 page rth – tw
10
TTK2837
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10µ
0.01
100µ
Single pulse
PDM
t
T
Duty = t/T
Rth(ch-c) = 0.446 °C/W
1m
10m
100m
1
10
Pulse width tw (s)
Safe operating area
100
ID max (pulse) *
100 µs *
10 ID max (continuous)
1 ms *
1 DC operation
Ta = 25°C
0.1
0.01
* Single pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
1
10
VDSS max
100
Drain-source voltage VDS (V)
1000
EAS – Tch
500
400
300
200
100
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
Test circuit
RG = 25 Ω
VDD = 90 V, L = 2.0 mH
BVDSS
IAR
VDD
VDS
Wave form
ΕAS
=
1
2
⋅
L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TTK2837.PDF ] |
Número de pieza | Descripción | Fabricantes |
TTK2837 | Silicon N Channel Field Effect Transistor | Toshiba |
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