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What is RB085BM-90?

This electronic component, produced by the manufacturer "ROHM Semiconductor", performs the same function as "Schottky Barrier Diode".


RB085BM-90 Datasheet PDF - ROHM Semiconductor

Part Number RB085BM-90
Description Schottky Barrier Diode
Manufacturers ROHM Semiconductor 
Logo ROHM Semiconductor Logo 


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Schottky Barrier Diode
RB085BM-90
lApplication
General Rectification
lDimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) Cathode common dual type
3) High reliability
4) Low VF
lConstruction
Silicon epitaxial planar type
1
ROHM : TO-252
JEITA : SC-63
1 : Manufacture Date
lTaping specifications (Unit : mm)
1.6 1.6
TO-252
2.3 2.3
lStructure
(2)
Cathode
(1) (3)
Anode Anode
lAbsolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Conditions
Repetitive Peak Reverse Voltage
VRM 90 V Duty0.5
Reverse Voltage
Average forward rectified current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
VR
Io
IFSM
Tj
90 V Direct Reverse Voltage
10
A
60Hz half sin Wave resistive load,
Tc=98°C max., 1/2 Io per diode
50
A
60Hz half sin wave,
Non-repetitive at Ta=25ºC, per diode
150 °C
-
Storage Temperature
Tstg -40 to +150 °C
-
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
Reverse current
VF - - 0.83 V IF=5.0A
IR - - 0.15 mA VR=90V
Thermal Resistance
Rth(j-c)
-
- 6.0 °C / W Junction to Case
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.10 - Rev.A

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RB085BM-90 equivalent
RB085BM-90
lElectrical characteristic curves
Data Sheet
100
Rth(j-a)
10 Rth(j-c)
Mounted on glass epoxy board
1
IM=100mA
IF=1A
time
0.1
0.001 0.01 0.1
1ms300ms
1 10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
30
20
DC
0A Io
0V
t VR
D=t/T
T VR=VRM/2
Tj=150°C
D = 1/2
10
Sin(θ=180)
0
0 25 50
75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
30
25
20 DC
0A Io
0V
t VR
D=t/T
T VR=VRM/2
Tj=150°C
15
D = 1/2
10
5 Sin(θ=180)
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
30
No Break at 30kV
25
20
15
10 AVE : 5.3kV
5
C=200pF
C=100pF
0 R=0W
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/5
2014.10 - Rev.A


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Part Details

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Information Total 6 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
RB085BM-90The function is Schottky Barrier Diode. ROHM SemiconductorROHM Semiconductor

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