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PDF STP310N10F7 Data sheet ( Hoja de datos )
| Número de pieza | STP310N10F7 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STP310N10F7
N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ VII DeepGATE™
Power MOSFET in a TO-220 package
Datasheet - production data
Features
TAB
3
2
1
TO-220
Figure 1. Internal schematic diagram
' 7$%
Order code
STP310N10F7
VDS RDS(on) max. ID
100 V 2.7 mΩ 180 A
• Ultra low on-resistance
• 100% avalanche tested
Applications
• Switching applications
Description
This device utilizes the 7th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
*
6
$0Y
Order codes
STP310N10F7
Table 1. Device summary
Marking
Package
310N10F7
TO-220
Packaging
Tube
July 2013
This is information on a product in full production.
DocID022287 Rev 7
1/13
www.st.com
1 page  
STP310N10F7
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
ISD Source-drain current
ISDM(1)
Source-drain current
(pulsed)
VSD(2) Forward on voltage
ISD=60 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=180 A,
di/dt = 100 A/µs,
VDD=80 V, Tj=150°C
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulse duration = 300µs, duty cycle 1.5%
-
-
-
-
-
-
Typ. Max. Unit
180 A
720 A
1.5 V
85 ns
200 nC
4.7 A
DocID022287 Rev 7
5/13
13
5 Page 
STP310N10F7
Package mechanical data
Figure 19. TO-220 type A drawing
DocID022287 Rev 7
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13
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| PDF Descargar | [ Datasheet STP310N10F7.PDF ] | |
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