|
|
PDF IRF1205 Data sheet ( Hoja de datos )
| Número de pieza | IRF1205 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF1205 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
PROVISIONAL
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175 °C Operating Temprature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET® power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universely preferred for all
commercial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 93803
IRF1205
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.027Ω
ID = 41A
S
TO-220AB
Max.
41
29
164
83
0.56
± 20
190
25
8.3
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.8
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
11/3/99
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet IRF1205.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF120 | N-CHANNEL POWER MOSFETS |  Samsung semiconductor |
| IRF120 | 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |  Intersil Corporation |
| IRF120 | N-Channel Power MOSFETs/ 11 A/ 60-100 V |  Fairchild Semiconductor |
| IRF120 | N-Channel MOSFET Transistor |  Inchange Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |