Datasheet K4A4G085WD Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	K4A4G085WD	4Gb D-die DDR4 SDRAM Rev. 1.1, Feb. 2014 K4A4G045WD K4A4G085WD 4Gb D-die DDR4 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.2V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for refer	Samsung	data

K4A Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	K4A4G045WD	4Gb D-die DDR4 SDRAM Rev. 1.1, Feb. 2014 K4A4G045WD K4A4G085WD 4Gb D-die DDR4 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.2V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for refer	Samsung	data
2	K4A4G085WD	4Gb D-die DDR4 SDRAM Rev. 1.1, Feb. 2014 K4A4G045WD K4A4G085WD 4Gb D-die DDR4 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.2V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for refer	Samsung	data
3	K4A4G165WD	4Gb D-die DDR4 SDRAM Rev. 0.5, Feb. 2014 K4A4G165WD Preliminary 4Gb D-die DDR4 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.2V CAUTION : This document includes some items still under discussion in JEDEC. Therefore, those may be changed without pre-notice based on JEDEC progress. In additio	Samsung	data
4	K4A60DA	TK4A60DA TK4A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DA Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 60	Toshiba	data
5	K4A60DB	TK4A60DB TK4A60DB TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60DB Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.6Ω(typ.) • High forward transfer admittance: \|Yfs\| = 2.2 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600V) �	Toshiba Semiconductor	data

Esta página es del resultado de búsqueda del K4A4G085WD. Si pulsa el resultado de búsqueda de K4A4G085WD se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap