AD100-8 Datasheet PDF - HY-LINE
Part Number | AD100-8 | |
Description | Photodiode | |
Manufacturers | HY-LINE | |
Logo | ||
There is a preview and AD100-8 download ( pdf file ) link at the bottom of this page. Total 2 Pages |
Preview 1 page No Preview Available ! AD100-8 TO52S1
Avalanche Photodiode
Special characteristics:
high gain at low bias voltage
fast rise time
100 µm diameter active area
low capacitance
Parameters: (at 20 ±2°C)
Active Area
Dark Current 1)
(M=100)
Total Capacitance 1)
(M=100)
Breakdown Voltage UBR
(at ID=2µA)
Temperature Coefficient of UBR
Spectral Responsivity
(at 800 nm, at M=100)
Cut-off Frequency
(-3dB)
Rise Time
Optimum Gain
Max. Gain
"Exess Noise" factor
(M=100)
"Exess Noise" index
(M=100)
Noise Current
(M=100)
N.E.P.
(M=100, 800 nm)
Operating Temperature
Storage Temperature
0.00785 mm2
∅ 100 µm
max. 0.1 nA
typ. 50 pA
typ. 0.8 pF
120 - 190 V
0.35 … 0.55 V/K
typ. 0.45 V/K
min. 45 A/W
typ. 50 A/W
> 2 GHz
< 180 ps
50 - 60
> 200
typ. 2.2
typ. 0.2
typ. 0.15 pA/Hz½
typ. 3 * 10-15 W/Hz½
-20 ... +70 °C
-60 ... +100 °C
1) measurement conditions:
Setup of photo current 50 pA at M = 1 and irradiation by a LED
(680 nm, 60 nm bandwith).
Increase the photo current up to 5.0 nA, (M = 100) by internal multiplication
due to an increasing bias voltage.
Package (TO52S1):
CASE
ANODE
4
31
45°
∅ 2.54
∅ 5.4 ± 0.2
∅ 4.7 ± 0.1
∅ 2.5 ± 0.1
∅ 2.0 min.
CATHODE
∅ 0.45
Chip: AD100-8
diam. active area: 100 µm
1
3
4
view without
window cap
www.silicon-sensor.com
Version: 04-10-26
Specification before: SSO-AD-100-8-TO52-S1
www.pacific-sensor.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AD100-8 electronic component. |
Information | Total 2 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ AD100-8.PDF Datasheet ] |
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