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Número de pieza | 60N3LH5 | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 60N3LH5 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! STD60N3LH5
STP60N3LH5, STU60N3LH5
N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220
STripFET™ V Power MOSFET
Features
Type
STD60N3LH5
STP60N3LH5
STU60N3LH5
VDSS
30 V
30 V
30 V
RDS(on) max
0.008 Ω
0.0084 Ω
0.0084 Ω
ID
48 A
48 A
48 A
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD60N3LH5
STP60N3LH5
STU60N3LH5
Marking
60N3LH5
60N3LH5
60N3LH5
Package
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
April 2009
Doc ID 14079 Rev 3
1/16
www.st.com
16
1 page STD60N3LH5, STP60N3LH5, STU60N3LH5
Electrical characteristics
Table 6. Switching on/off (resistive load)
Symbol
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Rise time
VDD=10 V, ID= 24 A,
RG=4.7 Ω, VGS= 10 V
(Figure 13 and
Figure 18)
td(off)
tf
Turn-off delay time
Fall time
VDD=10 V, ID= 24 A,
RG=4.7 Ω, VGS= 10 V
(Figure 13 and
Figure 18)
Min. Typ. Max. Unit
6
-
33
ns
-
ns
19 ns
--
4.2 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM
Source-drain current
Source-drain current (pulsed)(1)
VSD Forward on voltage
ISD=24 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=48 A,
di/dt =100 A/µs,
VDD=20 V, (Figure 15)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
48 A
-
192 A
- 1.1 V
25
- 18.5
1.5
ns
nC
A
Doc ID 14079 Rev 3
5/16
5 Page STD60N3LH5, STP60N3LH5, STU60N3LH5
Package mechanical data
DIM.
A
A1
b
b2
b4
c
c2
D
E
e
e1
H
L
(L1)
L2
V1
TO-251 (IPAK) mechanical data
min.
2.20
0.90
0.64
mm.
typ
5.20
0.45
0.48
6.00
6.40
2.28
4.40
16.10
9.00
0.80
0.80
10 o
max.
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
4.60
9.40
1.20
0068771_H
Doc ID 14079 Rev 3
11/16
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet 60N3LH5.PDF ] |
Número de pieza | Descripción | Fabricantes |
60N3LH5 | N-channel Power MOSFET | STMicroelectronics |
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