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PDF D2318 Data sheet ( Hoja de datos )
| Número de pieza | D2318 | |
| Descripción | NPN Transistor - 2SD2318 | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
High-current gain Power Transistor
(60V, 3A)
2SD2318
2SD2318
!Features
1) High DC current gain.
2) Low saturation voltage.
(Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A)
3) Complements the 2SB1639.
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
80
60
6
3
4.5
1
15
150
-55~+150
!External dimensions (Units : mm)
Unit
V
V
V
A
*A(Pulse)
W
W(Tc=25˚C)
˚C
˚C
5.5 1.5
0.9
ROHM : CPT3
EIAJ : SC-63
0.8Min.
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SD2318
CPT3
UV
TL
2500
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
* Measured using pulse current.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
80
60
6
-
-
-
-
560
-
-
Typ.
-
-
-
-
-
-
-
-
50
60
Max.
-
-
-
100
100
1.0
1.5
1800
-
-
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=80V
VEB=6V
IC/IB=2A/0.05A
IC/IB=2A/0.05A
VCE/IC=4V/0.5A
VCE=5V, IE=-0.2A, f=10MHz
VCB=10V, IE=0A, f=1MHz
*
*
*
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet D2318.PDF ] | |
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