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Datasheet TIC206M Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1TIC206MTriacs

INCHANGE Semiconductor isc Triacs isc Product Specification TIC206M FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM VRRM IT(RMS) ITSM Tj Tstg Rth(j-c) Rth(j-a) Repeti
Inchange Semiconductor
Inchange Semiconductor
triac
2TIC206MTIRISTORI

TIRISTORI I TRIJACI TIR TRIJACI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TIR UDRM ITAV IGT Tip Cena URRM Case (V) (A) (mA) BT136 1,20 600 4 20 TO220C BT137 1,50 600 8 20 TO220C BT138 1,80 600 12 30 TO220C TO220C BT139 2,00 600 16 30 TO220C BTA04 2,50 600 4
M&G Electronic
M&G Electronic
data
3TIC206MSILICON TRIACS

TIC206 SERIES SILICON TRIACS Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997 q q q q q Sensitive Gate Triacs 4 A RMS Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrants 1 - 3) MT1 MT2 G 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in
Power Innovations Limited
Power Innovations Limited
triac
4TIC206M(TIC206x) SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • 4 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrants 1-3) Sensitive gate triacs Compliance to ROHS DESCRIPTION This device is a b
Comset Semiconductors
Comset Semiconductors
thyristor
5TIC206MThyristor TRIAC 600V 25A 3-Pin(3+Tab) TO-220

New Jersey Semiconductor
New Jersey Semiconductor
triac


TIC Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1TIC106SILICON CONTROLLED RECTIFIERS

TIC106 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 1997, Power Innovations Limited, UK APRIL 1971 - REVISED MARCH 1997 q q q q q 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 µA K A G 1 2 3 TO-220 PACKAGE (TOP VIEW)
Power Innovations Limited
Power Innovations Limited
rectifier
2TIC106Thyristor SCR 400V 30A 3-Pin(3+Tab) TO-220

New Jersey Semiconductor
New Jersey Semiconductor
thyristor
3TIC106APNP SILICON REVERSE BLOCKING TRIODE THYRISTORS

Texas
Texas
thyristor
4TIC106A(TIC106x) P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 µA Compliance t
Comset Semiconductors
Comset Semiconductors
thyristor
5TIC106AThyristor SCR 400V 30A 3-Pin(3+Tab) TO-220

New Jersey Semiconductor
New Jersey Semiconductor
thyristor
6TIC106BPNP SILICON REVERSE BLOCKING TRIODE THYRISTORS

Texas
Texas
thyristor
7TIC106B(TIC106x) P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 200 µA Compliance t
Comset Semiconductors
Comset Semiconductors
thyristor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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