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Datasheet MJ413 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MJ413 | 10 AMPERE POWER TRANSISTORS NPN SILICON MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ413/D
High-Voltage NPN Silicon Transistors
. . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc • Gain Specified to 3.5 Amp • High Frequency Re |  Motorola Semiconductors | transistor |
| 2 | MJ413 | 10 Amp NPN Silicon Power Transistors 125W MCC
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omponents 21201 Itasca Street Chatsworth !"# $
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MJ413 MJ423 MJ431
High Collector-Emitter Voltage VCES=400V DC Current Gain Specified 3.5A High Frequency Response to 2.5 MHz
10 Amp NPN Silicon Power Tra |  Micro Commercial Components | transistor |
| 3 | MJ413 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package www.datasheet4u.com ·High voltage APPLICATIONS ·Designed for medium-to-high voltage Inverters,converters,regulators and switching circuits PINNING(see Fig.2)
PIN 1 2 3 Base Emitter DESCRIPT |  SavantIC | transistor |
| 4 | MJ413 | Trans GP BJT NPN 400V 10A 3-Pin(2+Tab) TO-3 |  New Jersey Semiconductor | data |
MJ4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MJ400 | Bipolar NPN Device MJ400
Dimensions in mm (inches).
3.68 (0.145) rad. max.
6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad.
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.
11.94 (0.470) 12.70 (0.500)
24.13 (0.95) 24.63 (0.97)
1
14.48 (0.570) 14.99 (0.590)
2
0.71 (0.028) 0.86 (0.034)
Bi  Seme LAB data | | |
| 2 | MJ4030 | Power Transistor Motorola Semiconductors transistor | | |
| 3 | MJ4030 | POWER TRANSISTORS(16A /60-100V /150W) A
A
A
 Mospec transistor | | |
| 4 | MJ4030 | Silicon PNP Darlingtion Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
DESCRIPTION ·With TO-3 package ·Respectively complement to type MJ4035 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general purpose amplifier application  Inchange Semiconductor transistor | | |
| 5 | MJ4030 | MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS PNP MJ4030 – MJ4031 – MJ4032 MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
They are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use as output devices in complementary general purpose amplifie  Comset Semiconductors transistor | | |
| 6 | MJ4030 | Trans Darlington PNP 60V 16A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor data | | |
| 7 | MJ4031 | Power Transistor Motorola Semiconductors transistor | |
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