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Datasheet MJ16010 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | MJ16010 | 15 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 135 AND 175 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ16010/D
MJ16010
Designer's
SWITCHMODE Series NPN Silicon Power Transistors
These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suit |  Motorola Semiconductors | transistor |
| 2 | MJ16010 | NPN SILICON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ16010/D
MJ16010
Designer's
SWITCHMODE Series NPN Silicon Power Transistors
These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suit |  ON | transistor |
| 3 | MJ16010 | SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package www.datasheet4u.com ·High voltage ,high speed APPLICATIONS ·Switching Regulators ·Inverters ·Solenoids ·Relay Drivers ·Motor Controls ·Deflection Circuits PINNING (see Fig.2)
PIN 1 2 3 |  SavantIC | transistor |
| 4 | MJ16010 | Trans GP BJT NPN 450V 15A 3-Pin(2+Tab) TO-3 |  New Jersey Semiconductor | data |
| 5 | MJ16010 | Trans GP BJT NPN 450V 15A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor | data |
MJ1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MJ1000 | Medium-Power Complementary Silicon Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Medium-Power Complementary Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction wi  Motorola Inc transistor | | |
| 2 | MJ1000 | (MJ1000 / MJ1001) SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ1000/1001
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier appli SavantIC transistor | | |
| 3 | MJ1000 | (MJ1000 / MJ1001) Complementary Power Darlingtons NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS
The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the  Comset Semiconductors data | | |
| 4 | MJ1000 | Trans GP BJT NPN 60V 8A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor data | | |
| 5 | MJ10000 | POWER TRANSISTORS(20A/350-400V/175W) A
A
A
A
 Mospec Semiconductor transistor | | |
| 6 | MJ10000 | 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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MJ10000
Designer's
SWITCHMODE Series NPN Silicon Power Darlington Transistor
The MJ10000 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. I Motorola Inc transistor | | |
| 7 | MJ10000 | NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) MJ10000
NPN
SILICON TRANSISTOR
SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature
 Wing Shing Computer Components transistor | |
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