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Datasheet BSX45-10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BSX45-10 | SILICON NPN TRANSISTORS BSX45, -10, -16 BSX46, -10, -16 BSX47, -10
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BSX45 series types are silicon NPN epitaxial transistors designed for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-39 |  Central Semiconductor | transistor |
| 2 | BSX45-10 | NPN medium power transistors DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BSX45; BSX46; BSX47 NPN medium power transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23
Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES • High |  NXP Semiconductors | transistor |
| 3 | BSX45-10 | NPN SILICON PLANAR TRANSISTORS |  Siemens Semiconductor Group | transistor |
| 4 | BSX45-10 | Trans GP BJT NPN 40V 1A 3-Pin TO-39 |  New Jersey Semiconductor | data |
BSX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BSX19 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS Micro Electronics transistor | | |
| 2 | BSX20 | Low Power Bipolar Transistors BSX20
Low Power Bipolar Transistors
Feature:
• NPN Silicon Planar Switching Transistors.
Applications:
• High speed saturated switching applications.
TO-18 Metal Can Package
Dimensions
A B C D E F G H J K L
Minimum Maximum
5.24 5.84
4.52 4.97
4.31 5.33
0.40 0.53
- 0.76
- 1.27
- 2.97
0  Multicomp transistor | | |
| 3 | BSX20 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BSX20 TO-18
APPLICATIONS
High Speed Saturated Switching Applications
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage Collector -Emitter Voltage Collecto  CDIL transistor | | |
| 4 | BSX20 | NPN SILICON TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
(RBE = 10 Ohms)
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tq = 25°C
Tc = 100°C
Derate above 25°C
O  Motorola Semiconductors transistor | | |
| 5 | BSX20 | NPN switching transistor DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BSX20 NPN switching transistor
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 14
Philips Semiconductors
Product specification
NPN switching transistor
FEATURES • Low current (max. 200 mA) � NXP Semiconductors transistor | | |
| 6 | BSX20 | HIGH SPEED SATURATED SWITCHES BSX20
HIGH SPEED SATURATED SWITCHES
DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CES V CEO  STMicroelectronics data | | |
| 7 | BSX20 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS Micro Electronics transistor | |
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