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Datasheet BC307 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BC307 | PNP Silicon Epitaxial Planar Transistor BC307…BC308
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Ran |  SEMTECH | transistor |
| 2 | BC307 | SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC 307, A, B, C BC 308, A, B, C BC 309, A, B, C
TO-92 Plastic Package
General Purpose Transistors Deisgned For Small Signal Amplification
From DC To Low Radio Frequencie |  CDIL | transistor |
| 3 | BC307 | Amplifier Transistors(PNP) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document by BC307/D
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC307,B,C BC308C BC309B
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous T |  Motorola Semiconductors | transistor |
| 4 | BC307 | Amplifier Transistors(PNP Silicon) MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC307/D
Amplifier Transistors
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC307 BC307B BC307C BC308C
1 2 3
CASE 29–04, STYLE 17 TO–92 (TO–226AA)
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emit |  ON | transistor |
| 5 | BC307 | PNP general purpose transistors DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D186
BC307; BC307B PNP general purpose transistors
Product specification File under Discrete Semiconductors, SC04 1997 Mar 07
Philips Semiconductors
Product specification
PNP general purpose transistors
BC307; BC307B
FEATURES • Low c |  Philipss | transistor |
BC3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BC3.5 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | BC300 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302 TO-39 Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO CDIL transistor | | |
| 3 | BC300 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics amplifier | | |
| 4 | BC301 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302 TO-39 Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO CDIL transistor | | |
| 5 | BC301 | PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES Micro Electronics amplifier | | |
| 6 | BC302 | NPN EPITAXIAL PLANAR SILICON TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL PLANAR SILICON TRANSISTORS
BC300, BC301, BC302 TO-39 Metal Can Package
NPN SILICON LOW -AND- MEDIUM POWER TRANSISTORS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTIO CDIL transistor | | |
| 7 | BC302 | Bipolar NPN Device BC302
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 45V
5.08 (0.200) typ.
IC  Seme LAB data | |
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