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Datasheet BCY59 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BCY59 | SILICON PLANAR EPITAXIAL TRANSISTORS NPN BCY58 – BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS
The BCY58 and BCY59 are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are designed for use in audio drive and low-noise input stages. Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Rati |  Comset Semiconductor | transistor |
| 2 | BCY59 | SILICON NPN TRANSISTORS BCY58, VII, VIII, IX, X BCY59, VII, VIII, IX, X
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BCY58 and BCY59 series types are silicon NPN epitaxial planar transistors, mounted in a hermetically sealed metal case, designed for low noise amplifie |  Central Semiconductor | transistor |
| 3 | BCY59 | TRANSISTOR BCY58 BCY59
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
(RBE = 10 Ohms)
Emitter-Base Voltage Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc |  Motorola Semiconductors | transistor |
| 4 | BCY59 | NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
BCY58, BCY59 TO-18
Low Noise Audio Amplifier Input Stages & Driver Applications
Complementary BCY78/79
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
|  CDIL | transistor |
| 5 | BCY59 | NPN switching transistors DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BCY58; BCY59 NPN switching transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 17
Philips Semiconductors
Product specification
NPN switching transistors
FEATURES • Low current (max. |  NXP Semiconductors | transistor |
BCY Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BCY30 | PNP Silicon Transistor Central Semiconductor transistor | | |
| 2 | BCY30A | Bipolar PNP Device in a Hermetically sealed TO5 Metal Package
BCY30A
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO5 Metal Package.
6.10 (0.240) 6.60 (0.260)
38.00 (1.5) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
Bipolar PNP Device. VCEO = 64V
5.  Seme LAB data | | |
| 3 | BCY31 | PNP Silicon Transistor Central Semiconductor transistor | | |
| 4 | BCY31A | Bipolar PNP Device
BCY31A
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO5 Metal Package.
6.10 (0.240) 6.60 (0.260)
38.00 (1.5) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
Bipolar PNP Device. VCEO = 64V
5. Seme LAB data | | |
| 5 | BCY32 | PNP Silicon Transistor Central Semiconductor transistor | | |
| 6 | BCY33 | PNP Silicon Transistor Central Semiconductor transistor | | |
| 7 | BCY33A | Bipolar PNP Device
BCY33A
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar PNP Device in a Hermetically sealed TO5 Metal Package.
6.10 (0.240) 6.60 (0.260)
38.00 (1.5) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
Bipolar PNP Device. VCEO = 32V
5. Seme LAB data | |
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