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Datasheet 2N243 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12N243Trans GP BJT NPN 30V 0.1A 3-Pin TO-18

New Jersey Semiconductor
New Jersey Semiconductor
data
22N2432Bipolar NPN Device in a Hermetically sealed TO18 Metal Package

2N2432 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products can be processed in accordance wi
Seme LAB
Seme LAB
data
32N2432NPN SILICON LOW POWER TRANSISTOR

TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 Devices 2N2432 2N2432A Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VECO
Microsemi Corporation
Microsemi Corporation
transistor
42N2432ANPN SILICON LOW POWER TRANSISTOR

TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/313 Devices 2N2432 2N2432A Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VECO
Microsemi Corporation
Microsemi Corporation
transistor
52N2432ATrans GP BJT NPN 45V 0.1A 3-Pin TO-18

New Jersey Semiconductor
New Jersey Semiconductor
data


2N2 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12N20N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N20 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converte
Inchange Semiconductor
Inchange Semiconductor
mosfet
22N2000(2N2000 / 2N2001) alloy-junction germanium transistors

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ETC
ETC
transistor
32N2001(2N2000 / 2N2001) alloy-junction germanium transistors

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c
ETC
ETC
transistor
42N2017Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) 2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH 2N1985 NPN AMPL/SWITCH 2N1986 NPN AMPL/SWITCH 2N1987 NPN AMPL/SWITCH 2N1988 NPN AMPL/SWITCH 2N1989 NPN AMPL/SWITCH 2N1990 NPN AMPL/SWITCH 2N2017 NPN A
Central Semiconductor
Central Semiconductor
transistor
52N2017Trans GP BJT NPN 60V 0.5A 6-Pin TO-78

New Jersey Semiconductor
New Jersey Semiconductor
data
62N2018Trans GP BJT NPN 60V 0.5A 6-Pin TO-78

New Jersey Semiconductor
New Jersey Semiconductor
data
72N2019Trans GP BJT NPN 60V 0.5A 6-Pin TO-78

New Jersey Semiconductor
New Jersey Semiconductor
data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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