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Datasheet 2N2060 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12N2060DUAL AMPLIFIER TRANSISTOR

MAXIMUM RATINGS Rating 2N2060,A Symbol 2N2223,A 2N2480 2N2480A Collector-Emitter Voltage Collector-Emitter Voltage VCEO 60 40 40 VCER 80 — - Collector-Base Voltage VCBO 100 75 80 Emitter-Base Voltage VEBO 7.0 5.0 5.0 —Collector Current Continuous ic 500 One Die All Die
Motorola Semiconductors
Motorola Semiconductors
transistor
22N2060DUAL MATCHED NPN SILICON TRANSISTOR

DUAL MATCHED NPN SILICON TRANSISTOR 2N2060 / 2N2060A • Matched Dual NPN Transistors • Low Power • Hermetically Sealed TO-77 Metal Package • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCEO Collector – Emitter Voltage 60V V
TT
TT
transistor
32N2060UNITIZED DUAL NPN SILICON TRANSISTOR

TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices 2N2060 2N2060L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC 2N2060 60 100 7.0 50
Microsemi
Microsemi
transistor
42N2060Silicon NPN Transistor

Semicoa
Semicoa
transistor
52N2060Trans GP BJT NPN 60V 0.5A 6-Pin TO-78

New Jersey Semiconductor
New Jersey Semiconductor
data


2N2 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12N20N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N20 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converte
Inchange Semiconductor
Inchange Semiconductor
mosfet
22N2000(2N2000 / 2N2001) alloy-junction germanium transistors

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c
ETC
ETC
transistor
32N2001(2N2000 / 2N2001) alloy-junction germanium transistors

w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c
ETC
ETC
transistor
42N2017Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) 2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH 2N1985 NPN AMPL/SWITCH 2N1986 NPN AMPL/SWITCH 2N1987 NPN AMPL/SWITCH 2N1988 NPN AMPL/SWITCH 2N1989 NPN AMPL/SWITCH 2N1990 NPN AMPL/SWITCH 2N2017 NPN A
Central Semiconductor
Central Semiconductor
transistor
52N2017Trans GP BJT NPN 60V 0.5A 6-Pin TO-78

New Jersey Semiconductor
New Jersey Semiconductor
data
62N2018Trans GP BJT NPN 60V 0.5A 6-Pin TO-78

New Jersey Semiconductor
New Jersey Semiconductor
data
72N2019Trans GP BJT NPN 60V 0.5A 6-Pin TO-78

New Jersey Semiconductor
New Jersey Semiconductor
data



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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