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Datasheet 1N647 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N647 | STANDARD RECOVERY RECTIFIERS 1N645-1N649
High-reliability discrete products and engineering services since 1977
STANDARD RECOVERY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standa |  Digitron Semiconductors | rectifier |
| 2 | 1N647 | Silicon Switching Diode DO-35 Glass Package Silicon Rectifier Diodes
Use Advantages
1N645 to 649 or 1N645-1 to 649-1
DO-35 Glass Package
Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers. |  Microsemi Corporation | diode |
| 3 | 1N647 | SILICON GENERAL PURPOSE DIODE |  New Jersey Semiconductor | diode |
| 4 | 1N647-1 | Silicon Switching Diode DO-35 Glass Package Silicon Rectifier Diodes
Use Advantages
1N645 to 649 or 1N645-1 to 649-1
DO-35 Glass Package
Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers. | Microsemi Corporation | diode |
| 5 | 1N6470 | TRANSIENT SUPPRESSORS | Microsemi Corporation | tvs-diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | |
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