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Datasheet GN1F4Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GN1F4Z | MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR |  NEC | transistor |
GN1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GN1010 | GaAs N-Channel MES IC GaAs MMICs
GN1010
GN1010
GaAs N-Channel MES IC
For high-output high-gain amplification
0.65±0.15
Unit : mm
2.8 –0.3
+0.2 +0.2
1.5 –0.3
0.65±0.15
s Features
0.95
q q q
General-use wide-band amplifier
2.9±0.2
0.5R
1.9±0.2
4
1
0.95
Low noise With bandwidth control pin
3
2
1.1 �  Panasonic Semiconductor data | | |
| 2 | GN1021 | GaAs N Channel MES Type IC Matsushita data | | |
| 3 | GN1022 | GaAs N Channel MES Type IC Matsushita data | | |
| 4 | GN125 | Adjustable handles GN 125
Adjustable handles
• Black-oxide steel body. • Black-oxide steel arm with DIN 319 black phenolic based (PF) Duroplast ball knob available in two executions: - with straight arm (type D) - with inclined arm by a 15° angle (type E). • Black-oxide steel threaded bushing. • Treated steel  ELESA and GANTERGRIFF data | | |
| 5 | GN13 | SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER GN1A THRU GN1M, GN13
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1300 Volts Forward Current - 1.0 Ampere
Features
For surface mounted applications Low profile package Built-in strain relief Easy pick and place Plastic package has Underwriters Laboratory Flammability Cl  GOOD-ARK Electronics rectifier | | |
| 6 | GN13 | GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT GN1A - GN13
PRV : 50 - 1000 Volts Io : 1.0 Ampere
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
SMA (DO-214AC)
1.1 ± 0.3 5.0 ± 0.15 4.5 ± 0.15
1.2 ± 0.2 2.6 ± 0.  EIC discrete Semiconductors data | | |
| 7 | GN1A | GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT GN1A - GN13
PRV : 50 - 1000 Volts Io : 1.0 Ampere
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
SMA (DO-214AC)
1.1 ± 0.3 5.0 ± 0.15 4.5 ± 0.15
1.2 ± 0.2 2.6 ± 0. EIC discrete Semiconductors data | |
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