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PDF SKiM501GD063DM Data sheet ( Hoja de datos )
| Número de pieza | SKiM501GD063DM | |
| Descripción | Superfast NPT-IGBT Modules | |
| Fabricantes | Semikron International | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SKiM501GD063DM (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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SKiM501GD063DM
SKiM® 5
Superfast NPT-IGBT
Modules
SKiM501GD063DM
Features
• NPT-IGBT with positive temperature
coefficient of VCEsat
• Short circuit, self limiting to 6 x IC
• DBC substrate: AlN
• Integrated temperature sensor
Typical Applications*
• Resonant inverters up to 100kHz
• Inductive heating
• Electronic welders at fSW up to 20kHz
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICnom
ICRM
VGES
Tj = 150 °C
ICRM = 2xICnom
Ts = 25 °C
Ts = 70 °C
tpsc VGE ≤ 20 V
Tj = 125 °C
VCES ≤ 600 V
Tj
Inverse diode
IF
Tj = 150 °C
Ts = 25 °C
Ts = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-s)
IC = 600 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 12 mA
VGE = 0 V
VCE = 600 V
Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 20 V
Tj = 25 °C
VCC = 300 V
IC = 600 A
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
per IGBT
Values
600
515
392
600
1200
-20 ... 20
10
-40 ... 150
492
320
600
1200
4152
-40 ... 150
700
-40 ... 125
2500
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min. typ. max. Unit
2 2.5 V
2.4 2.9 V
0.9 1 V
0.8 0.9 V
2.0 2.7 m
2.9 3.3 m
4.5 5.5 6.5 V
0.1 0.3 mA
mA
27.00
nF
nF
2.40 nF
nC
1.7
ns
ns
mJ
ns
ns
mJ
0.09 K/W
GD
© by SEMIKRON
Rev. 0 – 18.11.2010
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet SKiM501GD063DM.PDF ] | |
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