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PDF A1123 Data sheet ( Hoja de datos )
| Número de pieza | A1123 | |
| Descripción | PNP Transistor - 2SA1123 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de A1123 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SA1123
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC2631
s Features
q Satisfactory foward current transfer ratio hFE collector current IC
characteristics.
q High collector to emitter voltage VCEO.
q Small collector output capacitance Cob.
q Makes up a complementary pair with 2SC2631, which is opti-
mum for the pre-driver stage of a 20 to 40W output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–150
–150
–5
–100
–50
750
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
ICBO
VCEO
VEBO
hFE*
VCE(sat)
VCB = –100V, IE = 0
IC = –0.1mA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –10mA
IC = –30mA, IB = –3mA
–150
–5
130
–1 µA
V
V
450
–1 V
Transition frequency
fT VCB = –10V, IE = 10mA, f = 200MHz
200 MHz
Collector output capacitance
Noise voltage
Cob
NV
VCB = –10V, IE = 0, f = 1MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
5 pF
150 300 mV
*hFE Rank classification
Rank
R
hFE 130 ~ 220
S
185 ~ 330
T
260 ~ 450
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet A1123.PDF ] | |
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