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B1503 Datasheet PDF - Panasonic Semiconductor

Part Number B1503
Description 2SB1503
Manufacturers Panasonic Semiconductor 
Logo Panasonic Semiconductor Logo 

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Power Transistors
2SB1503
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2276
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
s Features
q Optimum for 110W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): < –2.5V
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
–160
–140
–5
–12
–7
120
3.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
1.5
2.0±0.3
3.0±0.3
1.0±0.2
1.5
2.7±0.3
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
Internal Connection
C
B
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = –160V, IE = 0
VCE = –140V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –5V, IC = –1A
VCE = –5V, IC = –7A
IC = –7A, IB = –7mA
IC = –7A, IB = –7mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –7A, IB1 = –7mA, IB2 = 7mA,
VCC = –50V
min
–140
2000
5000
E
typ max Unit
–100 µA
–100 µA
–100 µA
V
30000
–2.5 V
–3.0 V
20 MHz
1.0 µs
1.5 µs
1.2 µs
*hFE2 Rank classification
Rank
Q
S
P
hFE2 5000 to 15000 7000 to 21000 8000 to 30000
1



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