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What is C2120?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "Silicon NPN Epitaxial Type Transistor".


C2120 Datasheet PDF - Toshiba Semiconductor

Part Number C2120
Description Silicon NPN Epitaxial Type Transistor
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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1112SC2120
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2120
Audio Power Amplifier Applications
Unit: mm
High hFE: hFE (1) = 100~320
1 watts amplifier applications.
Complementary to 2SA950
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
35
30
5
800
160
600
150
55~150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 35 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
VCE = 1 V, IC = 100 mA
(Note)
hFE (2) VCE = 1 V, IC = 700 mA
VCE (sat) IC = 500 mA, IB = 20 mA
VBE VCE = 1 V, IC = 10 mA
fT VCE = 5 V, IC = 10 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 100~200, Y: 160~320
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Min Typ. Max Unit
  0.1 µA
  0.1 µA
30  
V
100 320
35  
  0.5 V
0.5 0.8 V
120 MHz
13 pF
1 2005-08-02


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for C2120 electronic component.


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C2120 transistor


1. Vcbo=35V, NPN Transistor - Toshiba

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