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PDF MRF21120 Data sheet ( Hoja de datos )
| Número de pieza | MRF21120 | |
| Descripción | RF POWER FIELD EFFECT TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF21120/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications.
• W–CDMA Performance @ –45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch
Output Power — 14 Watts (Avg.)
Power Gain — 11.5 dB
Efficiency — 16%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2170 MHz, 120 Watts (CW)
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
MRF21120
2170 MHz, 120 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 375D–04, STYLE 1
NI–1230
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
–0.5, +15
389
2.22
–65 to +150
200
Class
1 (Minimum)
M3 (Minimum)
Max
0.45
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 7
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF21120
1
1 page  
C35
C34
C19
VGG
C15
C17
C31
C30
C32 C33
VDD
C16C14
B1
R3 C13
R5
C29
C7 L3
C28
C27
R1
C1 C2
C3
L2
C4
L1
R2
C9
C8
C11
C10
R4
B2
VGG
C25
R6
C20
C23
C24
226
35K
C21
649
C22
C6 L4
C36
C37
C39 C38
C40 C41 C43
VDD
226
35K
649
C42 C44
Figure 2. 2.1 – 2.2 GHz Broadband Test Circuit Component Layout
L5
C12 C5
MOTOROLA RF DEVICE DATA
MRF21120
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MRF21120.PDF ] | |
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