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PDF IRLB4132PbF Data sheet ( Hoja de datos )
| Número de pieza | IRLB4132PbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Approved
(Not Released)
PD - TBD
IRLB4132PbF
Applications
l Optimized for UPS/Inverter Applications
l Low Voltage Power Tools
Benefits
l Best in Class Performance for UPS/Inverter
Applications
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
VDSS
30V
G
Gate
HEXFET® Power MOSFET
RDS(on) max Qg
3.5mΩ
36nC
D
DS
G
TO-220AB
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
hMaximum Power Dissipation
hMaximum Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
hJunction-to-Case
Parameter
Case-to-Sink, Flat Greased Surface
gJunction-to-Ambient
Max.
30
± 20
f150
100
78
620
140
68
0.90
-55 to + 175
300 (1.6mm from case)
x10lbfxin (1.1N m)
Typ.
–––
0.5
–––
Max.
1.11
–––
62
Units
V
A
W
W/°C
°C
Units
°C/W
Notes through are on page 9
www.irf.com
1
03/27/09
1 page  
IRLB4132PbF
160
140
120
100
80
60
40
20
0
25
Limited By Package
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
2.5
2.0
1.5 ID = 100µA
ID = 250µA
ID = 1.0mA
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
R4R4
Ri (°C/W) τi (sec)
0.85073 0.006515
τCτ 0.00562 8.246536
τ3 τ3
τ4τ4
0.00099 6.148011
0.25266 0.000371
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRLB4132PbF.PDF ] | |
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