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PDF C2458L Data sheet ( Hoja de datos )
| Número de pieza | C2458L | |
| Descripción | Silicon NPN Epitaxial Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SC2458(L)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2458(L)
Audio Amplifier Applications
Low Noise Audio Amplifier Applications
Unit: mm
· High current capability: IC = 150 mA (max)
· High DC current gain: hFE = 70~700
· Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
· Low noise: NF (2) = 0.2dB (typ.), 3dB (max)
· Complementary to 2SA1048 (L).
· Small package.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
50
50
5
150
50
200
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 2 mA
VCE (sat)
fT
Cob
NF (1)
NF (2)
IC = 100 mA, IB = 10 mA
VCE = 10 V, IC = 1 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 0.1 mA, f = 100 Hz,
RG = 10 kW
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
RG = 10 kW
Note: hFE classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.1 mA
70 ¾ 700
¾ 0.1 0.25 V
80 ¾ ¾ MHz
¾ 2.0 3.5 pF
¾ 0.5
6
dB
¾ 0.2
3
1 2003-03-27
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C2458L.PDF ] | |
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