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PDF PMEG050V150EPD Data sheet ( Hoja de datos )
| Número de pieza | PMEG050V150EPD | |
| Descripción | 15A low VF MEGA Schottky barrier rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
4 December 2014
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a CFP15 (SOT1289) power
and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Average forward current: IF(AV) ≤ 15 A
• Reverse voltage: VR ≤ 50 V
• Extremely low forward voltage
• High power capability due to clip-bonding technology and heat sink
• Small and thin SMD power plastic package, typical height 0.78 mm
• AEC-Q101 qualified
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Freewheeling application
• Reverse polarity protection
• Low power consumption application
4. Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
IR reverse current
Conditions
δ = 0.5; f = 20 kHz; Tsp ≤ 160 °C;
square wave
Tj = 25 °C
IF = 15 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
VR = 50 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
Min Typ Max Unit
- - 15 A
- - 50 V
- 450 500 mV
- 30 70 µA
- 260 1000 µA
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NXP Semiconductors
PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Symbol
V(BR)R
VF
IR
Cd
trr
trr
VFRM
Characteristics
Parameter
Conditions
reverse breakdown
voltage
IR = 5 mA; Tj = 25 °C; tp ≤ 1.2 ms;
δ ≤ 0.12; pulsed
forward voltage
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 5 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 15 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 15 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 125 °C; pulsed
reverse current
VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C;
pulsed
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
VR = 50 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
diode capacitance
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
step recovery
Tj = 25 °C
reverse recovery time dIF/dt = 200 A/µs; Tj = 25 °C; IF = 6 A;
ramp recovery
VR = 26 V
peak forward recovery IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
voltage
Min Typ Max Unit
50 - - V
- 305 350 mV
- 365 420 mV
- 415 - mV
- 450 500 mV
- 380 - mV
- 20 - µA
- 30 70 µA
- 70 - µA
- 260 1000 µA
- 1750 - pF
- 570 - pF
- 51 - ns
- 20 - ns
- 288 - mV
PMEG050V150EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
PMEG050V150EPD
50 V, 15 A low VF MEGA Schottky barrier rectifier
13. Soldering
Footprint information for reflow soldering of CFP15 package
4.6
3.73
1.4 (2×)
1.8 (2×)
1.6 (2×)
2.13
1.64 1.44 1.34
1.9
7.5
5.16 4.96
1.9
occupied area
solder resist
0.6
solder lands
solder paste
Issue date
13-08-28
14-03-12
Dimensions in mm
Fig. 18. Reflow soldering footprint for CFP15 (SOT1289)
1.7 (4×)
0.2
2.4
3.8
4
0.6 0.4
0.11
1.02
0.2
0.2
0.05
SOT1289
sot1289_fr
PMEG050V150EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 15
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