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What is KGH15N120NDA?

This electronic component, produced by the manufacturer "KEC", performs the same function as "NPT IGBTs".


KGH15N120NDA Datasheet PDF - KEC

Part Number KGH15N120NDA
Description NPT IGBTs
Manufacturers KEC 
Logo KEC Logo 


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SEMICONDUCTOR
TECHNICAL DATA
KGH15N120NDA
General Description
KEC NPT IGBTs offer lowest losses and highest energy efficiency for
application such as IH (induction heating), UPS, General inverter and other
soft switching applications.
FEATURES
High speed switching
Higher system efficiency
Soft current turn-off waveforms
Square RBSOA using NPT technology
A
N
O
D
E
d
PP
123
QB
K
M
T
1. GATE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d 1.00 +_ 0.20
E 3.00 +_ 0.20
F 3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
K 1.5+0.15-0.05
L 16.50 +_ 0.30
M 1.40 +_ 0.20
N 13.60 +_ 0.20
O 9.60 +_ 0.20
P 5.45 +_ 0.30
Q 3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Emitter Voltage
Gate-Emitter Voltage
VCES
VGES
1200
20
V
V
Collector Current
Pulsed Collector Current
@TC=25
@TC=100
Diode Continuous Forward Current @TC=100
Diode Maximum Forward Current
24 A
IC
15 A
ICM* 45 A
IF 15 A
IFM 45 A
Maximum Power Dissipation
Maximum Junction Temperature
@TC=25
@TC=100
200 W
PD
80 W
Tj 150
Storage Temperature Range
Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
TO-3P(N)-E
C
G
E
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
SYMBOL
R JC
R JC
MAX.
0.6
2.8
UNIT
/W
/W
2009. 2. 19
Revision No : 1
1/6

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KGH15N120NDA equivalent
KGH15N120NDA
Fig 13. Gate Charge Characteristics
16
Common Emitter
14 RL = 40
TC = 25 C
12
10
8
6 Vcc = 200V
4
2
0
0 30
60
600V
400V
90 120 150
Gate Charge Qg (nC)
Fig 15. Turn-Off SOA
100
Fig 14. SOA Characteristics
100 IC MAX (Pulsed)
10 IC MAX (Continuous)
50µs
100µs
1 1ms
0.1
0.01
Single nonrepetitive pulse
Tc= 25 C
Curves must be derated
linearly with increase
in temperature
0.1 1
10
DC
100 1000
Collector-Emitter Voltage VCE (V)
10
Safe Operating Area
VGE = 15V, TC =125 C
1
1 10 100 1000
Collector-Emitter Voltage VCE (V)
Fig 16. Transient Thermal Impedance of IGBT
10
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1E-3
1E-5
Single Pluse
1E-4
1E-3 0.01
PDM
t1
t2
1. Duty factor D=t1/t2
2. Peak Tj = Pdm Zthjc + TC
0.1 1 10
Rectangular Pulse Duration (sec)
2009. 2. 19
Revision No : 1
5/6


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for KGH15N120NDA electronic component.


Information Total 6 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
KGH15N120NDAThe function is NPT IGBTs. KECKEC

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