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PDF HFF640 Data sheet ( Hoja de datos )
| Número de pieza | HFF640 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | HUASHAN ELECTRONIC | |
| Logotipo |  |
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Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF640
APPLICATIONSL
High Voltage High-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PD Allowable Power Dissipation Tc=25
VDSS
Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS=1M )
VGSS Gate-Source Voltage
ID *Drain Current Tc=25
* Drain current limited by maximumjunction temperature
5 5 ~1 5 0
150
43W
200V
200V
±20V
18A
ELECTRICAL CHARACTERISTICS Ta=25
TO-220F
1
1G
2D
3S
Symbol
Characteristic s
Min Typ
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
200
IGSS Gate –Source Leakage Current
VGS(th) Gate Threshold Voltage
2.0
RDS(on) Static Drain-Source On-Resistance
gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(on) Turn - On Delay Time
tr Rise Time
td(off) Turn - Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
Is Continuous Source Current
VSD
Rth j-c
Diode Forward Voltage
Thermal Resistance
Junction-to-Case
*Pulse Test Pulse Width 300 s Duty Cycle 2%
175
45
20
145
145
110
45
6.5
22
Max Unit
Test Conditions
V ID=250 A ,VGS=0V
VDS =200V VGS=0
100 VGS= 20V , VDS =0V
4.0 V VDS = VGS , ID =250 A
? VGS=10V, ID =9A
S VDS = 40V , ID =9A*
pF
230 pF
60 pF
50 nS
300 nS
300 nS
230 nS
58 nC
VDS =25V, VGS=0,f=1
VDD =100V,
ID =18A
RG= 25 *
VDS =0.8VDSS
nC
nC
IS =18A , VGS=0
1 page  
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
HFF640
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet HFF640.PDF ] | |
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