PDF AS4C4M4F1 Data sheet ( Hoja de datos )

Número de pieza	AS4C4M4F1
Descripción	5V 4M x 4 CMOS DRAM
Fabricantes	Alliance Semiconductor
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Hay una vista previa y un enlace de descarga de AS4C4M4F1 (archivo pdf) en la parte inferior de esta página. Total 18 Páginas
No Preview Available ! ® 5V 4M×4 CMOS DRAM (Fast Page mode) AS4C4M4F0 AS4C4M4F1 Features • Organization: 4,194,304 words × 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O • Fast page mode • Refresh - 4096 refresh cycles, 64 ms refresh interval for AS4C4M4F0 - 2048 refresh cycles, 32 ms refresh interval for AS4C4M4F1 - RAS-only or CAS-before-RAS refresh or self-refresh • TTL-compatible, three-state I/O • JEDEC standard package - 300 mil, 24/26-pin SOJ - 300 mil, 24/26-pin TSOP • Latch-up current ≥ 200 mA • ESD protection ≥ 2000 mV • Industrial and commercial temperature available Pin arrangement SOJ TSOP VCC I/O0 I/O1 WE RAS NC/A11 1 2 3 4 5 6 26 GND 25 I/O3 VCC 1 I/O0 2 24 I/O2 I/O1 3 23 CAS WE 4 22 OE RAS 5 21 A9 NC/A11 6 26 GND 25 I/O3 24 I/O2 23 CAS 22 OE 21 A9 A10 8 A0 9 A1 10 A2 11 A3 12 VCC 13 19 A8 18 A7 17 A6 16 A5 15 A4 14 GND A10 8 A0 9 A1 10 A2 11 A3 12 VCC 13 19 18 17 16 15 14 *NC on 2K refresh version; A11 on 4K refresh version A8 A7 A6 A5 A4 GND Pin designation Pin(s) Description A0 to A11 Address inputs RAS Row address strobe CAS Column address strobe WE Write enable I/O0 to I/O3 Input/output OE Output enable VCC GND Power Ground Selection guide Maximum RAS access time Maximum column address access time Maximum CAS access time Maximum output enable (OE) access time Minimum read or write cycle time Minimum fast page mode cycle time Maximum operating current Maximum CMOS standby current Symbol tRAC tCAA tCAC tOEA tRC tPC ICC1 ICC5 AS4C4M4F0-50 AS4C4M4F1-50 50 25 12 13 85 25 135 1.0 4/11/01; v.0.9 Alliance Semiconductor AS4C4M4F0-60 AS4C4M4F1-60 60 30 15 15 100 30 120 1.0 Unit ns ns ns ns ns ns mA mA P. 1 of 18 Copyright © Alliance Semiconductor. All rights reserved. 1 page AC parameters common to all waveforms Symbol tRC tRP tRAS tCAS tRCD tRAD tRSH tCSH tCRP tASR tRAH tT tREF tCP tRAL tASC tCAH Parameter Random read or write cycle time RAS precharge time RAS pulse width CAS pulse width RAS to CAS delay time RAS to column address delay time CAS to RAS hold time RAS to CAS hold time CAS to RAS precharge time Row address setup time Row address hold time Transition time (rise and fall) Refresh period CAS precharge time Column address to RAS lead time Column address setup time Column address hold time Read cycle Symbol tRAC tCAC tAA tRCS tRCH tRRH Parameter Access time from RAS Access time from CAS Access time from address Read command setup time Read command hold time to CAS Read command hold time to RAS ® -50 Min Max 80 – 30 – 50 10K 8 10K 15 35 12 25 10 – 40 – 5– 0– 8– 1 50 – 64 8– 25 – 0– 8 -50 Min Max – 50 – 12 – 25 0– 0– 0– AS4C4M4F0 AS4C4M4F1 -60 Min Max 100 – 40 – 60 10K 10 10K 15 43 12 30 10 – 50 – 5– 0– 10 – 1 50 – 64 10 – 30 – 0– 10 – Unit Notes ns ns ns ns ns 6 ns 7 ns ns ns ns ns ns 4,5 ms 3 ns ns ns ns -60 Min Max – 60 – 15 – 30 0– 0– 0– Unit Notes ns 6 ns 6,13 ns 7,13 ns ns 9 ns 9 4/11/01; v.0.9 Alliance Semiconductor P. 5 of 18 5 Page AS4C4M4F0 AS4C4M4F1 ® Fast page mode read waveform RAS tRASP tRP CAS Address WE OE I/O tCRP tRCD tCSH tCAS tCP tRSH tPC tASR tRAH Row tRAD tAR tRAC Column tRCS tRCH tOEA tCLZ tAA Data out tASC Column tRCS tRAL tCAH Column tRCH tOEA tRRH tOEZ tOFF tCAP Data out tCAC Data out Fast page mode byte write waveform RAS CAS tASR Address WE OE I/O tRASP tRCD tCSH tPCM tCAS tRAD Row tRCS tRAH tCAH Column tRWD tCWD tAWD tOEA tOEZ tCP tCAH Column tCWL tCWD tOED tRAC tAA tCLZ tDS tDH tDS tCLZ tCAC tCAC Data in Data out Data in Data out tRP tRAL tCAH Column tCWD tAWD tOEA tCRP tRWL tCWL tWP tCAP tCLZ tCAC Data out Data in 4/11/01; v.0.9 Alliance Semiconductor P. 11 of 18 11 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
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